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Articles by author: Masaya Ichimura

• Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic Oxidation
  Published in: Silicon Carbide and Related Materials 2001 (p933)
• Characterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient Spectroscopy
  Published in: Silicon Carbide and Related Materials 2008 (p381)
• Characterization of Photoelectrochemical Properties of SiC as a Water Splitting Material
  Published in: Silicon Carbide and Related Materials 2011 (p585)
• Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay Method
  Published in: Silicon Carbide and Related Materials 2009 (p207)
• Correlation between Schottky Contact Characteristics and Regions with a Low Barrier Height Revealed by the Electrochemical Deposition on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p669)
• Correlation between Strain and Excess Carrier Lifetime in a 3C-SiC Wafer
  Published in: Silicon Carbide and Related Materials 2011 (p305)
• Deep Level Characterization and its Passivation in 3C-SiC Monitored by Capacitance Transient Methods
  Published in: Defects and Diffusion in Ceramics (p1)
• Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition
  Published in: Silicon Carbide and Related Materials 2007 (p373)
• Electrochemical Etching of n-Type 6H-SiC Using Aqueous KOH Solutions
  Published in: Silicon Carbide and Related Materials - 2002 (p665)
• Electron-Beam Epitaxy and Superdiffusion in Alloy Semiconductors by Electron-Beam Irradiation
  Published in: Defects in Semiconductors 15 (p1193)
• Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution
  Published in: Silicon Carbide and Related Materials 2003 (p505)
• Excess Carrier Lifetimes in a Bulk p-Type SiC Wafer Measured by the Microwave Photoconductivity Decay Method
  Published in: Silicon Carbide and Related Materials 2006 (p359)
• Improvement of Schottky Contact Characteristics by Anodic Oxidation of 4H-SiC
  Published in: Silicon Carbide and Related Materials 2010 (p461)
• Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2004 (p381)
• Superdiffusion of Zn into GaAs in an Array of GaAs/Zn/GaAs during Electron Irradiation at 50°C
  Published in: Defects in Semiconductors 15 (p735)