HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Matthias Scheffler

• Calculated Thermodynamic Potentials for the Vacancy and the Oxygen A-Center in Silicon
  Published in: Defects in Semiconductors 15 (p625)
• Chalcogen and Vacancy Pairs in Silicon: Electronic Structure and Stabilities
  Published in: Defects in Semiconductors 14 (p25)
• Computation of Hyperfine Interactions for Substitutional Se⁺and S⁺ Impurities in Silicon
  Published in: Defects in Semiconductors 15 (p293)
• Defect Metastability in III-V Compounds
  Published in: Defects in Semiconductors 16 (p735)
• Parameter-Free Calculations of the Pressure Dependence of Impurity Levels, Entropies and of Defect-Formation Volumes
  Published in: Defects in Semiconductors 15 (p299)
• Pressure Dependences of Transition Energies of the As Antisite and the Ga-Vacancy-As-Interstitital Pair Compared to Stable and Metastable EL2
  Published in: Defects in Semiconductors 17 (p995)
• Resonant Raman Scattering at Point Defects in GaAs
  Published in: Defects in Semiconductors 14 (p353)
• The EL2 Defect in GaAs
  Published in: Defects in Semiconductors 15 (p51)
• Theory of 4d Transition-Metal Ions in Silicon: Total-Energies, Diffusion, Electronic and Magnetic Properties
  Published in: Defects in Semiconductors 15 (p257)