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Papers by Author: Matthias Scheffler

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Pressure Dependences of Transition Energies of the As Antisite and the Ga-Vacancy-As-Interstitital Pair Compared to Stable and Metastable EL2

Authors: Christine Ziegler, Udo Scherz, Matthias Scheffler

995

Defect Metastability in III-V Compounds

Authors: Jaroslaw Dąbrowski, Matthias Scheffler

735

Calculated Thermodynamic Potentials for the Vacancy and the Oxygen A-Center in Silicon

Authors: S. Biernacki, Udo Scherz, R. Gillert, Matthias Scheffler

625

Parameter-Free Calculations of the Pressure Dependence of Impurity Levels, Entropies and of Defect-Formation Volumes

Authors: D. Weider, Matthias Scheffler, Udo Scherz

299

Computation of Hyperfine Interactions for Substitutional Se⁺and S⁺ Impurities in Silicon

Authors: Harald Overhof, Matthias Scheffler, C.M. Weinert

293

Theory of 4d Transition-Metal Ions in Silicon: Total-Energies, Diffusion, Electronic and Magnetic Properties

Authors: Franz Beeler, Matthias Scheffler

257

The EL2 Defect in GaAs

Authors: Jaroslaw Dąbrowski, Matthias Scheffler

51

Resonant Raman Scattering at Point Defects in GaAs

Authors: Matthias Scheffler, Udo Scherz

353

Chalcogen and Vacancy Pairs in Silicon: Electronic Structure and Stabilities

Authors: C.M. Weinert, Matthias Scheffler

25