Papers by Author: Mauricio Pacio

Abstract: Multi-angular branched ZnO microstructures with rods-shaped tips and nanopushpins with hexagonal cap on top have been synthesized by a simple thermal treatment process of compacted ZnS powder used as starting material and substrate. The structures have been grown at different temperatures (800, 900 and 1000 °C) for 60 min, in a constant nitrogen environment at atmospheric pressure via a catalyst-free process. XRD results of the as-grown products from ZnS powder show a significant reduction in the cubic zincblende phase to the hexagonal wurtzite phase with the increase of treatment temperature, as compared to the bulk value. Post-anneal analyses indicated that the transformation of morphologies of the as-grown structures also depends strongly on the treatment temperature. The proposed method represents an easy and economical way to grow complex structures of ZnO, with a relatively short time, furthermore, without the neediness of use an external substrate to grow. These new and interesting nanostructures have potential in applications such as optoelectronics.

Abstract: In this work, core-shell ZnO@SiO₂ nanoparticles (NPs) were infiltrated into a macro/meso-porous silicon (PS) structure, to study its luminescent properties. The core-shell ZnO@SiO₂ NPs were obtained by colloidal synthesis. The core-shell ZnO@SiO₂ NP was 5 nm in diameter. The macro/meso-PS structure was made in two steps: we obtained the macroporous silicon (macro-PS) layer fist and the mesoporous silicon (meso-PS) layer second. This process was conducted using different electrolyte solutions, and the change of electrolyte led to a decrease in the special charge region over the wall macro-PS layer; this allowed the building of the meso-PS layers on the walls and the bottom of the macro-PS layer. The SEM results show the cross-section of the macro/meso-PS structure with and without core-shell ZnO@SiO₂ NPs. These SEM images show that the core-shell ZnO@SiO₂ NPs that infiltrated into macro/meso-PS structure were more efficiently bonded over all the porous walls. The core-shell ZnO@SiO₂ PL interacted with the macro/meso-PS structure, modifying its PL intensity and controlling a shift toward a lower wavelength.

Abstract: In this study, we report the effect of ZnO film thickness on its optical and structural properties. The sol solution was synthesized by sol-gel method and deposited on silicon substrates by spin coating technique. The ZnO films thickness was varied from 60 to 180 nm. The ZnO films obtained showed a highly preferred orientation along the (002) plane. It was also observed that the crystallite size was not affected by increasing thickness. Transmittance measurements indicated that the ZnO films have a high transparency in the visible range (~90 %), which remained constant with thickness. Morphological evolution measurements confirmed that the thinner ZnO film consist mostly of a porous layer which became homogeneous and compact to increase the thickness. Photoluminescence measurements exhibit a strong ultraviolet (UV) emission, and the emission intensity was improved with thickness due to crystallinity enhancement.

Abstract: Fluorinated silicon oxide (SiOF) films have been prepared in a conventional atmospheric pressure chemical vapor deposition (APCVD) reactor. APCVD technique utilizes tetraethoxysilane, ozone and hydrofluoric anhydride as gas sources. SiOF films are deposited by changing the temperature of deposit. Substrate holder was maintained in the temperature range of 200 to 275°C. Films were characterized based on the deposition temperature. Chemical bonding structure of the films was evaluated by Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy and ellipsometry techniques. FTIR spectra revealed Si-F bond at about 935 cm-1. Incorporation of fluorine has a minimal contribution in the reduction of refractive index of SiOF films from 1.46 to 1.35.Therefore, the main mechanism responsible for this reduction of refractive index is the porosity generated by incorporation of fluorine atom in the SiOF films. Dielectric constant was reduced from 4.2 corresponding to that of SiO2 films, to the values in the range of 3.18 to 3.6 for SiOF films deposited by APCVD technique.