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Articles by author: Maurizio Acciarri

• About a Novel Gettering Procedure for Multicrystalline Silicon Samples
  Published in: Polycrystalline Semiconductors IV (p485)
• About the Electrical Properties of Oxygen Phases Segregated by Annealing Cz Silicon in the 600-800°C Range
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p327)
• Advances in Structural Characterization of Thin Film Nanocrystalline Silicon for Photovoltaic Applications
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p33)
• Analysis of Extended Defects in 6H-SiC Using Photoluminescence and Light Beam Induced Current Spectroscopy
  Published in: Silicon Carbide and Related Materials - 2002 (p317)
• Beam Injection Studies of Dislocations and Oxygen Precipitates in Semiconductor Silicon
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p57)
• Determination of the Surface Recombination Velocity and of Its Evolution in Monocrystalline Silicon by the Light Beam Induced Current Technique in Planar Configuration
  Published in: Beam Injection Assessment of Defects in Semiconductors (p123)
• Effect of Local Inhomogeneities on the Electrical Properties of Polycrystalline Silicon
  Published in: Polycrystalline Semiconductors III (p219)
• Electrical and Optical Characterization of Electron Irradiated X Rays Detectors Based on 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2003 (p1503)
• Electrical and Optical Properties of Dislocations Generated under Pure Conditions
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p453)
• Electrical Properties of Oxygen Precipitates Formed During Two Step Low Temperature Annealing
  Published in: Polycrystalline Semiconductors V (p39)
• Impact of Extended Defects on the Electrical Properties of Solar Grade Multicrystalline Silicon for Solar Cell Application
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p419)
• Luminescence of Dislocations and Oxide Precipitates in Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p273)
• New Evidences about Carbon and Oxygen Segregation Processes in Polycrystalline Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p181)
• Spectroscopical and Electrical Evidences about Segregation Effects in Semiconductors
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p479)