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Articles by author: Michael J. O'Loughlin

• 10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p1025)
• 12 kV, 1 cm² SiC GTO Thyristors with Negative Bevel Termination
  Published in: Silicon Carbide and Related Materials 2011 (p1151)
• 1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation
  Published in: Silicon Carbide and Related Materials 2010 (p633)
• 9 kV, 1 cm² SiC Gate Turn-Off Thyristors
  Published in: Silicon Carbide and Related Materials 2009 (p1017)
• Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2011 (p297)
• Critical Technical Issues in High Voltage SiC Power Devices
  Published in: Silicon Carbide and Related Materials 2007 (p895)
• Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2005 (p493)
• Defect Status in SiC Manufacturing
  Published in: Silicon Carbide and Related Materials 2008 (p3)
• Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices
  Published in: Silicon Carbide and Related Materials 2006 (p77)
• Development of 1200 V, 3.7 mΩ-cm² 4H-SiC DMOSFETs for Advanced Power Applications
  Published in: Silicon Carbide and Related Materials 2011 (p1059)
• Development of 15 kV 4H-SiC IGBTs
  Published in: Silicon Carbide and Related Materials 2011 (p1135)
• Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices
  Published in: Silicon Carbide and Related Materials 2004 (p155)
• Development of Large Area (up to 1.5 cm²) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers
  Published in: Silicon Carbide and Related Materials 2007 (p931)
• Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates
  Published in: Silicon Carbide and Related Materials 2007 (p99)
• High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs
  Published in: Silicon Carbide and Related Materials 2011 (p1065)