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Articles by author: Michael J. Uren

• A Simple Non-Destructive Technique to Detect Micropipes in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2000 (p303)
• Advances in AlGaN/GaN/SiC Microwave Devices
  Published in: Silicon Carbide and Related Materials 2006 (p1017)
• Effect of Plasma Etching and Sacrificial Oxidation on 4H-SiC Schottky Barrier Diodes
  Published in: Silicon Carbide and Related Materials - 1999 (p1199)
• High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes
  Published in: Silicon Carbide and Related Materials 2006 (p987)
• High Temperature Characterisation of 4H-SiC VJFET
  Published in: Silicon Carbide and Related Materials 2006 (p799)
• High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown
  Published in: Silicon Carbide and Related Materials 2005 (p931)
• High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension
  Published in: Silicon Carbide and Related Materials 2006 (p873)
• Optical Characterization of Lattice Damage and Recovery in Ion-Implanted and Pulsed Excimer Laser Irradiated 4H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p655)
• Silicon Carbide Vertical JFET Operating at High Temperature
  Published in: Silicon Carbide and Related Materials 2007 (p1063)
• Surface Control of 4H-SiC MESFETs
  Published in: Silicon Carbide and Related Materials 2001 (p1387)
• Surface Induced Instabilities in 4H-SiC Microwave MESFETs
  Published in: Silicon Carbide and Related Materials - 1999 (p1251)
• Surface Morphology Improvement of SiC Epitaxy by Sacrificial Oxidation
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p367)
• The Properties of Individual Si/SiO₂ Defects and Their Link to 1/F Noise
  Published in: Defects in Semiconductors 16 (p1519)