Papers by Author: Michel Lannoo

Abstract: This study presents ionized impurity impacts on silicon nanowire MOS transistors. We calculate the current characteristics with a self-consistent three-dimensional (3D) Green’s function approach and show the effects of both acceptor and donor impurities on the physical electron properties. In particular, we emphasize that the presence of a donor induces different transport phenomena according to the applied gate bias. Our results show that the influence of a single impurity strongly depends on its position and induces high transistor performance variability with current modifications from 50% to two orders of magnitude.

Abstract: There now a large variety of methods exists for the elaboration of nanoobjects and nanodevices. At the same time the reduction in size together with the improvement of theoretical techniques and computational power should allow efficient quantitative simulation of these objects. Such predictive simulation is highly needed since it can serve as a useful guide to build new nanostructures with the desired properties. The aim of this talk is than to give an overview of what has already been achieved in this rapidly evolving field, what can be done at present and what is expected for the future. The focus will be mostly on semiconductor nanostructures and especially silicon.