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Articles by author: Michel Lannoo

• Atomistic Nanodevice Simulation
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p787)
• Coexistence of Deep and Shallow Paramagnetic Excited States of the DX Center in GaAlAs
  Published in: Defects in Semiconductors 16 (p787)
• EL2 and the Electronic Structure of the As_Ga-A_Sj Pair in GaAs: The Role of Jahn-Teller Relaxation and Coulomb Interaction
  Published in: Defects in Semiconductors 15 (p91)
• Evidence for an Assisted Defect Mechanism Leading to a Reduced Apparent Band Offset
  Published in: Defects in Semiconductors 17 (p587)
• Metastable to Stable EL2 Regeneration via an 'Auger' Mechanism Induced by the Debye Tail
  Published in: Defects in Semiconductors 15 (p85)
• Negative U Systems at Semiconductor Surfaces
  Published in: Defects in Semiconductors 16 (p1397)
• On the Behaviour of Hole Capture with Multiphonon Emission at Deep Level Defects H3 and H4 in p-GaAs
  Published in: Defects in Semiconductors 14 (p463)
• Review of DX Center Models
  Published in: Physics of DX Centers in GaAs Alloys (p209)
• Screening of the Coulomb Interaction and Transition Metal Energy Levels Pinning to the Semiconductor Neutrality Level
  Published in: Defects in Semiconductors 15 (p275)
• Selfconsistent Tight Binding Theory of Trends for Substitutional Transition Metal Ions in Si and GaAs
  Published in: Defects in Semiconductors 14 (p37)
• Spin Dependent Recombination: An Improved Theory Applied to Deep Centers in Silicon
  Published in: Defects in Semiconductors 17 (p1359)
• The A₁-T₂ Transition of Substitutional Deep Impurities
  Published in: Physics of DX Centers in GaAs Alloys (p195)
• The Relative Importance of Radiative and Non Radiative Recombinations in the Luminescence of Porous Silicon
  Published in: Defects in Semiconductors 17 (p1463)
• The Theory of Rare-Earth Impurities in Semiconductors
  Published in: Defects in Semiconductors 17 (p699)
• Theoretical Study of Ionized Impurities in Silicon Nanowire MOS Transistors
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p511)