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Articles by author: Mikael Syväjärvi

• Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates
  Published in: Silicon Carbide and Related Materials 2009 (p565)
• As-Grown 4H-SiC Epilayers with Magnetic Properties
  Published in: Silicon Carbide and Related Materials 2003 (p747)
• Behavior of Micropipes during Growth in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p395)
• Carrier Dynamics in Hetero- and Homo-Epitaxially Sublimation Grown 3C-SiC Layers
  Published in: Silicon Carbide and Related Materials 2010 (p161)
• Characteristics of Boron in 4H-SiC Layers Produced by High-Temperature Techniques
  Published in: Silicon Carbide and Related Materials 2001 (p259)
• Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers
  Published in: Silicon Carbide and Related Materials - 2002 (p709)
• Characteristics of Planar Defects in Shallow Trenches Related to the Presence of Micropipes
  Published in: Silicon Carbide and Related Materials - 2002 (p277)
• Characterization of 4H-SiC MOS Structures with Al₂O₃ as Gate Dielectric
  Published in: Silicon Carbide and Related Materials 2004 (p709)
• Characterization of Anisotropic Step-bunching on as-grown SiC Surfaces
  Published in: Silicon Carbide and Related Materials - 1999 (p375)
• Characterization of Electronic Properties of Different SiC Polytypes by All-Optical Means
  Published in: Silicon Carbide and Related Materials 2007 (p509)
• Characterizations of SiC/SiO₂ Interface Quality Toward High Power MOSFETs Realization
  Published in: Silicon Carbide and Related Materials 2003 (p1281)
• Considerations on the Crystal Morphology in the Sublimation Growth of SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p95)
• Contactless Electrical Defect Characterization and Topography of a-Plane Grown Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2006 (p327)
• Domain Occurance in SiC Epitaxial Layers Grown by Sublimation
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p151)
• Effect of Ambient on 4H-SiC Bulk Crystals Grown by Sublimation
  Published in: Silicon Carbide and Related Materials - 2002 (p75)