Papers by Author: Ming Qiang Pan

Abstract: A simple composite bonding that combines dielectric barrier discharge (DBD) plasma activation with anodic bonding has been developed to achieve strong silicon/glass bonding at low temperature. The realization of low temperature bonding is attributed to enhance the hydrophilicity and smooth of silicon and glass surfaces and form lots of free radical after the DBD plasma (including-OH, -H, O, and heat) reacts with the interfaces. And these further reduce the difficulty of chemical bond switching, and improve the speed of the intimate contact formation. The experimental result show that the bonding temperature strongly decreased 100°C by using composite anodic bonding with DBD pretreatment which strength kept constant, and 10MPa bonding strength was obtained at 250°C/900V after the bonding interface was treated for 10s under the conditions of AC1.5KV/25KHz and the clearance 100μm.

Abstract: With the development of MEMS technology, the pressure sensors, one of mature MEMS devices, are expected to better performance. In order to improve sensors performance, supporting vitreous body shape is elongated and thinned. But the variety of the vitreous body shape brings the new difficulties for anodic bonding between the vitreous body and the silicon during the sensors production, and causes that the common bonding process conditions are unavailable and bonding failure rate dramatically increases. Therefore, this article analyzes the bonding process between slender vitreous body and silicon, and researches on the influence of the vitreous body variety on the pressure, temperature and voltage. The results showed that the bonding is the best when the cantilever elastic deformation is less than 0.5mm, interface temperature loaded from the silicon is 415°C and the voltage 1200V is loaded from the position near H=2mm.

Abstract: Wire bonding is one of the critical technologies of devices production, assembly and packaging in the microelectronic and MEMS field. During bonding process, the gold wires break easily, because the wires are repeatedly operated with high-speed. Therefore, the experiments were performed to analyze bonding process and the reason causing wire break. The results show that it is critical to prevent the broken wire to control the pressure wire pressure, the speed and angle of the pulling wire structure, the clamp gap, the capillary tip gap, and discharging energy in bonding process. the broken wire doesn’t occurs when the pressure wire pressure, the speed of the pulling wire structure, the angle of the pulling wire structure, the clamp gap, the capillary tip gap, the time and the current are 3-5g, 5rad/s and 10rad, 0.1-0.3mm, 1mm, 35ms and 10mA , respectively.