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Articles by author: N.I. Kuznetsov

• 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density
  Published in: Silicon Carbide and Related Materials - 1999 (p505)
• 4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates
  Published in: Silicon Carbide and Related Materials - 1999 (p229)
• 4H-SiC pn Diode Grown by LPE Method for High-Power Applications
  Published in: Silicon Carbide and Related Materials - 2002 (p867)
• Electric Characteristics of 6H-SiC/GaN Isotype n-n Heterojunctions
  Published in: Silicon Carbide and Related Materials - 1999 (p1655)
• Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method
  Published in: Silicon Carbide and Related Materials 2001 (p1313)
• Optically Transparent 6H-Silicon Carbide
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p53)
• Pd-Based Ohmic Contacts to LPE 4H-SiC with Improved Thermal Stability
  Published in: Silicon Carbide and Related Materials - 2002 (p713)
• Porous SiC: New Applications through In- and Out- Dopant Diffusion
  Published in: Silicon Carbide and Related Materials - 2002 (p657)
• Reliability of 4H-SiC p-n Diodes on LPE Grown Layers
  Published in: Silicon Carbide and Related Materials - 2002 (p929)
• Reliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n Diode
  Published in: Silicon Carbide and Related Materials 2001 (p917)
• Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p497)