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Articles by author: N. Inoue

• Annealing Behaviour of New Nitrogen Infrared Absorption Peaks in CZ Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p609)
• Conductivity Control of SiC by In-Situ Doping and Ion Implantation
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p675)
• Deep States in SiO₂/p-Type 4H-SiC Interface
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p841)
• Infrared Absorption Analysis of Nitrogen in Czochralski Silicon
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p63)
• Infrared Absorption from Low Carbon Concentration, Low Dose, Annealed CZ Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p207)
• Infrared Absorption Measurement of Carbon Concentration down to 1x10¹⁴/cm³ in CZ Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p621)
• Measurement of Nitrogen Concentration in Cz Silicon Crystals
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p489)