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Articles by author: N.N. Ledentsov

• Coulomb Interaction between Carriers Localized in InAs/GaAs Quantum Dots and on Point Defects
  Published in: Defects in Semiconductors 19 (p1619)
• III-V Heterostructure Lasers with Short Period Superlattice Recombination Region
  Published in: Molecular Beam Epitaxy (p75)
• Influence of Growth Parameters on the Surface Morphology of MBE Grown GaAs and Al_xGa_1-xAs Layers
  Published in: Molecular Beam Epitaxy (p9)
• Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1291)
• Nonequilibrium Spectroscopy of Inter- and Intraband Transitions in Quantum Dot Structures
  Published in: Ultrafast Phenomena in Semiconductors 2001 (p39)
• Optical Switching of Double-Barrier Resonant Tunneling AlGaAs/GaAs Diode
  Published in: Molecular Beam Epitaxy (p13)
• Phonon-Plasmon Interaction in Tunnelling GaAs/AlAs Superlattices Grown on (311) and (100) Substrates
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p581)
• Spontaneous Interlevel Emission from Quantum Dot and Quantum Well Laser Structures
  Published in: Ultrafast Phenomena in Semiconductors (p189)
• The Advantages of Selectively Delta-Doped III-V Heterostructures for HEMT Applications
  Published in: Molecular Beam Epitaxy (p67)