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Articles by author: N.Yu. Arutyunov

• 1D-ACAR Studies of As-Grown Impurity Centers in Silicon
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p795)
• Atomic Environment of Positrons Annihilating in Different Parts of Cz-Si Single Crystal
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p507)
• Atomic Environment of Positrons Annihilating in HT Cz-Si Crystal
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p615)
• Configuration of DV Complexes In Ge: Positron Probing of Ion Cores
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p89)
• Formal Valency of Cu(1) in YBa₂Cu₃O_7-x and Electron Momentum Distributions: 1D-ADAP Data
  Published in: Positron Annihilation - ICPA-9 (p579)
• Point Defects in γ-Irradiated Germanium: High- and Low- Momentum Positron Annihilation Study Before and After n-p-Conversion
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p455)
• Positron Annihilation on Thermal Defects in Cz-Si and Fz-Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p589)
• Positron Annihilation Rate and Broad Component of 1D-ACAR in Cz-Si and Fz-Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p489)
• Positron Sudies of Thermal-Induced Defects in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p435)
• Positron Trapping by Oxygen-Related Defects in Silicon and Anisotropy of 1D-ACAR Spectra
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p333)
• Results of Systematic Study of Annihilation Photons 1D-Angular Distributions in Diamond-Like Semiconductors
  Published in: Positron Annihilation - ICPA-9 (p583)
• The Influence to 1D-ADAP Parameters in Re-Ba₂Cu₃O_7-x Oxides by Variations of Re-Elements, Oxygen Content and Temperature
  Published in: Positron Annihilation - ICPA-9 (p587)