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Articles by author: Noboru Ohtani

• Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11-20) Face
  Published in: Silicon Carbide and Related Materials - 2002 (p925)
• Influence of the Growth Direction and Polytype on the Stacking Fault Generation in α-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p25)
• Investigation of Low Angle Grain Boundaries in Modified-Lely SiC Crystals by High Resolution X-ray Diffractometry
  Published in: Silicon Carbide and Related Materials - 1999 (p493)
• Micropipe Formation Model via Surface Step Interaction
  Published in: Silicon Carbide and Related Materials 2001 (p99)
• Morphological Instability of 4H-SiC (0001) Basal Plane Surface during Si-Vapor Thermal Etching
  Published in: Silicon Carbide and Related Materials 2011 (p577)
• Observation of Macrostep Formation on the (0001) Facet of Bulk SiC Crystals
  Published in: Silicon Carbide and Related Materials - 1999 (p379)
• Precise Determination of Thermal Expansion Coefficients Observed in 4H-SiC Single Crystals
  Published in: Silicon Carbide and Related Materials 2005 (p699)
• Radial Expansion Growth of SiC Single Crystals with Higher Crystal Quality
  Published in: Silicon Carbide and Related Materials 2003 (p79)
• Raman Microprobe Study of Carrier Density Profiles in Modulation-Doped 6H SiC
  Published in: Silicon Carbide and Related Materials 2001 (p633)
• Site Identification of 6H-SiC Using RBS/Channeling Technique
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p441)
• Spatially Graded Graphitization on 4H-SiC (0001) with Si-Sublimation Gradient for High Quality Epitaxial Graphene Growth
  Published in: Silicon Carbide and Related Materials 2011 (p601)
• Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions
  Published in: Silicon Carbide and Related Materials 2007 (p341)
• Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2009 (p311)
• Surface Phase Diagram of 4H-SiC {0001} Step-Terrace Structures during Si-Vapor Etching in a TaC Crucible
  Published in: Silicon Carbide and Related Materials 2011 (p573)
• The Formation of an Epitaxial-Graphene Cap Layer for Post-Implantation High Temperature Annealing of SiC and its In Situ Removal by Si-Vapor Etching
  Published in: Silicon Carbide and Related Materials 2010 (p777)