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Articles by author: Olof Kordina

• 2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development
  Published in: Silicon Carbide and Related Materials - 1999 (p1387)
• Carrot Defect Control in Chloride-Based CVD through Optimized Ramp up Conditions
  Published in: Silicon Carbide and Related Materials 2011 (p109)
• Changes in the Exciton-Related Photoluminescence of 4H- and 6H-SiC Induced by Uniaxial Stress
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p489)
• Chloride Based CVD of 3C-SiC on (0001) α-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2010 (p75)
• Chloride-Based CVD at High Growth Rates on 3” Vicinal Off-Angles SiC Wafers
  Published in: Silicon Carbide and Related Materials 2009 (p107)
• Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates
  Published in: Silicon Carbide and Related Materials 2010 (p59)
• Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
  Published in: Silicon Carbide and Related Materials 2011 (p113)
• Chromium in 4H and 6H SiC: Photoluminescence and Zeeman Studies
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p603)
• Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2011 (p285)
• Concentrated Chloride-Based Epitaxial Growth of 4H-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p95)
• CVD Growth of 3C-SiC on 4H-SiC Substrate
  Published in: HeteroSiC & WASMPE 2011 (p16)
• CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates
  Published in: Silicon Carbide and Related Materials 2011 (p189)
• CVD of 6H-SiC on Non-Basal Quasi Polar Faces
  Published in: Silicon Carbide and Related Materials 2006 (p73)
• Effective-Mass-Like Excited Pseudo-Donor States of a Complex Metastable Defect in Silicon
  Published in: Shallow Impurities in Semiconductors V (p249)
• Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p557)