Papers by Author: P.C. Mathur

Abstract: In the present work, we report fabrication and electrical characterization of a back gated graphene field effect transistor (GFET). We have focused our study on the interfacial effect (graphene/SiO₂) on the performance of the device. Hysteresis was observed in the drain conductance when measured with respect to dual gate sweep voltage, which increases with increasing sweeping voltage range. The conductance was observed to increase with increase in temperature but there was no reduction in the hysteresis. This proved that temperature annealing could improve the channel conductivity but not the interfacial effects. Further, a metal oxide semiconductor (MOS) device was fabricated with SLG inserted in between the metal and oxide layer and its capacitance-voltage (C-V) characteristics were studied. A small series capacitance (2.1 nF) was observed to be existing in series with the oxide capacitance (4.5 nF) which was attributed to the trap states at the interface of graphene and SiO_2­ layer. Also, the flat band voltage was not affected by the incorporation of graphene layer in the MOS device indicating no change in the work function of the metal gate (Cr/Au). This is an advantageous situation where graphene does not alter its work function also being impermeable, restricts the diffusion of metal particles through the SiO₂.

Abstract: Quantum Dots (QDs) of CdSxSe1-x embedded in borosilicate glass matrix (BGM) have been grown using colored glass filter (RG695). Double-Step (DS) annealing method was adopted in which nucleation is achieved at a lower temperature (475°C) without any crystallization. To obtain crystallization on these nucleation centers, the annealing temperature is raised to 575°C at which the nucleation rate is negligible. QDs of various average radii and volume fractions are grown by varying the annealing duration from 3 to 11hrs. QDs corresponding to higher annealing duration are found to have low size dispersion (SD) and high volume fraction but weak quantum confinement, while, the QDs corresponding to lower annealing durations have high quantum confinement due to their much lower radii as compare to Bohr exciton radius, their SD is high and volume fraction low. For nonlinear optical applications the SD must be low and volume fraction should be high. Attempt has been made to optimize the two parameters. Further it has been concluded that there is no contribution of the band edge recombination to the PL and the origin of the PL is due to shallow traps existing in the volume of the QDs. Studies of absorption and PL have also been made on the samples aged for 18, 24 and 36 months. It is found that the effect of aging is to increase the absorption coefficient, reduce the shallow trap centers and reduce the SD.