Papers by Author: P. Ordejón

Paper TitlePage

First-Principles Study of O Adsorption at SiC Surface
Authors: Riccardo Rurali, E. Wachowicz, P. Ordejón, Philippe Godignon, Jose Rebollo, P. Hyldgaard
1293
Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC
Authors: Adam Gali, Peter Deák, E. Rauls, P. Ordejón, F.H.C. Carlsson, Ivan G. Ivanov, Nguyen Tien Son, Erik Janzén, Wolfgang J. Choyke
443
First-Principles Studies of N and P Dopant Interactions in SiC: Implications for Co-Doping
Authors: Riccardo Rurali, E. Hernández, Philippe Godignon, Jose Rebollo, P. Ordejón
649
A Cause for SiC/SiO2 Interface States: the Site Selection of Oxygen in SiC
Authors: Peter Deák, Adam Gali, Z. Hajnal, Thomas Frauenheim, Nguyen Tien Son, Erik Janzén, Wolfgang J. Choyke, P. Ordejón
535
Ab Initio Calculations of B Diffusion in SiC
Authors: Riccardo Rurali, E. Hernández, Philippe Godignon, Jose Rebollo, P. Ordejón
553
Copper-Defect and Copper-Impurity Interactions in Silicon
Authors: Stefan K. Estreicher, D. West, P. Ordejón
341
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