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Articles by author: P.S. Kop'ev

• Energy Relaxation Time and Microwave Noise in InAs/AlSb/GaSb/GaAs Heterostructures
  Published in: Ultrafast Phenomena in Semiconductors 2001 (p117)
• III-V Heterostructure Lasers with Short Period Superlattice Recombination Region
  Published in: Molecular Beam Epitaxy (p75)
• Influence of Growth Parameters on the Surface Morphology of MBE Grown GaAs and Al_xGa_1-xAs Layers
  Published in: Molecular Beam Epitaxy (p9)
• New Applications of Diffraction Analysis for Dislocation Structure in High Lattice-Mismatch MBE Grown Epitaxial Structures
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p553)
• Optical Switching of Double-Barrier Resonant Tunneling AlGaAs/GaAs Diode
  Published in: Molecular Beam Epitaxy (p13)
• Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with ³⁰Si Isotope: Electron Paramagnetic Resonance Study
  Published in: Silicon Carbide and Related Materials 2006 (p599)
• Probing of the Wave Function of Shallow Donors and Acceptors by EPR in SiC Crystals with Changed Isotopic Composition
  Published in: Silicon Carbide and Related Materials 2004 (p507)
• Spontaneous Interlevel Emission from Quantum Dot and Quantum Well Laser Structures
  Published in: Ultrafast Phenomena in Semiconductors (p189)
• The Advantages of Selectively Delta-Doped III-V Heterostructures for HEMT Applications
  Published in: Molecular Beam Epitaxy (p67)