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Articles by author: Pascal Besson

• Barrier and Copper Seedlayer Wet Etching
  Published in: Ultra Clean Processing of Silicon Surfaces VII (p361)
• Critical Thickness Threshold in HfO₂ Layers
  Published in: Ultra Clean Processing of Semiconductor Surfaces VIII (p67)
• Germanium Surface Passivation Using Ozone Gaseous Phase
  Published in: Ultra Clean Processing of Semiconductor Surfaces VIII (p37)
• Impact of Megasonic Activation with Different Chemistries on Silicon Surface in Single Wafer Tool
  Published in: Ultra Clean Processing of Semiconductor Surfaces IX (p15)
• Low Consumption Front End of the Line Cleaning: LC-FEOL
  Published in: Ultra Clean Processing of Silicon Surfaces V (p199)
• Modelling the Growth of Chemical Oxide for Advanced Surface Preparation
  Published in: Ultra Clean Processing of Silicon Surfaces VI (p187)
• Post Copper CMP: a Two Steps Cleaning Recipe
  Published in: Ultra Clean Processing of Silicon Surfaces V (p299)
• Post SiN Etching Cleaning During Copper and Low K Integration
  Published in: Ultra Clean Processing of Silicon Surfaces V (p101)
• Post-Etch Cleaning Chemistries Evaluation for Low k-Copper Integration
  Published in: Ultra Clean Processing of Silicon Surfaces VI (p263)
• Silicon Wafer Cleaning Processes Monitoring by the Surface Charge Profiler Method
  Published in: Ultra Clean Processing of Silicon Surfaces V (p47)
• Single Backside Cleaning on Silicon, Silicon Nitride and Silicon Oxide
  Published in: Ultra Clean Processing of Silicon Surfaces VII (p249)
• Single Wafer Hydrophobic Surface Preparation on 300mm by HF Vapor
  Published in: Ultra Clean Processing of Semiconductor Surfaces VIII (p11)