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Articles by author: Patrick Fiorenza

• 3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor.
  Published in: Silicon Carbide and Related Materials 2007 (p243)
• Conductive Atomic Force Microscopy Studies on the Reliability of Thermally Oxidized SiO₂/4H-SiC
  Published in: Silicon Carbide and Related Materials 2006 (p501)
• Current Transport by Defects in Pr₂O₃ High K Films
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p717)
• Electron Transport and Dielectric Breakdown Kinetics in Pr₂O₃ High K Films
  Published in: Mass and Charge Transport in Inorganic Materials III (p21)
• Growth of 3C-SiC on Si: Influence of Process Pressure
  Published in: Silicon Carbide and Related Materials 2007 (p211)
• Nanoscale Imaging of CaCu₃Ti₄O₁₂ Dielectric Properties: The Role of Surface Defects
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p443)
• On the “Step Bunching” Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2010 (p358)
• Reliability of Thin Thermally Grown SiO₂ on 3C-SiC Studied by Scanning Probe Microscopy
  Published in: Silicon Carbide and Related Materials 2009 (p833)
• Theoretical Monte Carlo Study of the Formation and Evolution of Defects in the Homoepitaxial Growth of SiC
  Published in: Silicon Carbide and Related Materials 2007 (p135)