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Articles by author: Peter Friedrichs

• 4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications
  Published in: Silicon Carbide and Related Materials - 2002 (p769)
• Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes
  Published in: Silicon Carbide and Related Materials 2007 (p95)
• Almost Ideal Thermionic-Emission Properties of Ti-Based 4H-SiC Schottky Barrier Diodes
  Published in: Silicon Carbide and Related Materials 2005 (p1147)
• Annealing of Aluminum Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing
  Published in: Silicon Carbide and Related Materials 2004 (p621)
• Application-Oriented Unipolar Switching SiC Devices
  Published in: Silicon Carbide and Related Materials 2001 (p1185)
• BIFET – a Novel Bipolar SiC Switch for High Voltage Power Electronics
  Published in: Silicon Carbide and Related Materials 2003 (p1245)
• Challenges in Large-Area Multi-Wafer SiC Epitaxy for Production Needs
  Published in: Silicon Carbide and Related Materials 2005 (p135)
• Comparison of 4H-SiC pn, Pinch and Schottky Diodes for the 3 kV Range
  Published in: Silicon Carbide and Related Materials 2001 (p1125)
• Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides
  Published in: Silicon Carbide and Related Materials 2009 (p681)
• Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices
  Published in: Silicon Carbide and Related Materials 2009 (p825)
• Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N₂O or NO
  Published in: Silicon Carbide and Related Materials 2008 (p521)
• Electro-Thermal SPICE Model for High-Voltage SiC VJFETs
  Published in: Silicon Carbide and Related Materials 2008 (p731)
• Fast Switching with SiC VJFETs - Influence of the Device Topology
  Published in: Silicon Carbide and Related Materials 2009 (p933)
• Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p89)
• High-Voltage Modular Switch Based on SiC VJFETs - First Results for a Fast 4.5kV/1.2Ω Configuration
  Published in: Silicon Carbide and Related Materials - 2002 (p793)