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Articles by author: Peter J. Wellmann

• In Situ Observation of Polytype Switches during SiC PVT Bulk Growth by High Energy X-Ray Diffraction
  Published in: Silicon Carbide and Related Materials 2008 (p23)
• Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p397)
• Acceptor-Hydrogen Interaction in Ternary III-V Semiconductors
  Published in: Defects in Semiconductors 18 (p987)
• Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method
  Published in: Silicon Carbide and Related Materials 2001 (p131)
• Aluminum P-Type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum
  Published in: Silicon Carbide and Related Materials 2007 (p19)
• Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2003 (p55)
• Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC
  Published in: Silicon Carbide and Related Materials 2005 (p79)
• Contactless Electrical Defect Characterization and Topography of a-Plane Grown Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2006 (p327)
• Defect Etching of Non-Polar and Semi-Polar Faces in SiC
  Published in: Silicon Carbide and Related Materials 2006 (p243)
• Determination of Exciton Capture Cross-Sections of Neutral Nitrogen Donor on Cubic and Hexagonal Sites in n-Type (N) 6H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p341)
• Development of a KOH Defect Etching Furnace with Absolute In-Situ Temperature Measurement Capability
  Published in: Silicon Carbide and Related Materials 2004 (p283)
• Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation
  Published in: Silicon Carbide and Related Materials - 1999 (p71)
• Efficient Image Segmentation for Detection of Dislocations in High Resolution Light Microscope Images of SiC Wafers
  Published in: Silicon Carbide and Related Materials 2010 (p277)
• Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals
  Published in: Silicon Carbide and Related Materials - 2002 (p337)
• Electronic Raman Studies of Shallow Donors in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2005 (p579)