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Articles by author: Philip G. Neudeck

• 6H-SiC Lateral JFETs for Analog Integrated Circuits
  Published in: Silicon Carbide and Related Materials 2007 (p1099)
• Absence of Dislocation Motion in 3C-SiC pn Diodes under Forward Bias
  Published in: Silicon Carbide and Related Materials 2006 (p223)
• Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy
  Published in: Silicon Carbide and Related Materials - 2002 (p213)
• Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from -150 °C to +500 °C
  Published in: Silicon Carbide and Related Materials 2009 (p1135)
• Characterization of SiC Epitaxial Structures using High-Resolution X-Ray Diffraction Techniques
  Published in: Silicon Carbide and Related Materials 2003 (p157)
• Comparative Growth Behavior of 3C-SiC Mesa Heterofilms with and without Extended Defects
  Published in: Silicon Carbide and Related Materials 2003 (p261)
• Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes
  Published in: Silicon Carbide and Related Materials - 1999 (p489)
• Defect Modeling and Simulation of 4-H SiC P-N Diode
  Published in: Silicon Carbide and Related Materials - 1999 (p1351)
• Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices
  Published in: Silicon Carbide and Related Materials - 1999 (p1161)
• Electron Microscopy Investigation of the Role of Surface Steps in the Generation of Dislocations during MOCVD Growth of GaN on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p1509)
• Experimental Observations of Extended Growth of 4H-SiC Webbed Cantilevers
  Published in: Silicon Carbide and Related Materials 2005 (p247)
• Fabrication and Testing of 6H-SiC JFETs for Prolonged 500 °C Operation in Air Ambient
  Published in: Silicon Carbide and Related Materials 2007 (p1079)
• Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy
  Published in: Silicon Carbide and Related Materials 2001 (p311)
• HCl Etching Behavior on Low-Tilt-Angle and Step-Free 4H-SiC Surfaces
  Published in: Silicon Carbide and Related Materials 2008 (p593)
• High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas
  Published in: Silicon Carbide and Related Materials 2003 (p1061)