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Articles by author: Philip G. Neudeck

• Schottky Barriers for Pt on 6H- and 4H-SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission
  Published in: Silicon Carbide and Related Materials 2001 (p921)
• Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission
  Published in: Silicon Carbide and Related Materials - 2002 (p705)
• SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 °C
  Published in: Silicon Carbide and Related Materials 2006 (p831)
• SiC Growth by Solvent-Laser Heated Floating Zone
  Published in: Silicon Carbide and Related Materials 2011 (p49)
• SiC-Based Gas Sensor Development
  Published in: Silicon Carbide and Related Materials - 1999 (p1439)
• SiC-Based Schottky Diode Gas Sensors
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1093)
• Silicon Carbide Differential Amplifiers for High-Temperature Sensing
  Published in: Silicon Carbide and Related Materials 2007 (p1083)
• Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers
  Published in: Silicon Carbide and Related Materials 2003 (p169)
• Step Structures Produced by Hydrogen Etching of Initially Step-Free (0001) 4H-SiC Mesas
  Published in: Silicon Carbide and Related Materials 2004 (p753)
• Synchrotron White Beam Topography Studies of 2H SiC Crystals
  Published in: Silicon Carbide and Related Materials - 1999 (p465)
• Synchrotron White Beam X-ray Topography and Atomic Force Microscopy Studies of a 540R-SiC Lely Platelet
  Published in: Silicon Carbide and Related Materials - 1999 (p469)
• Synchrotron White Beam X-Ray Topography and High Resolution Triple Axis X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Devices
  Published in: Silicon Carbide and Related Materials - 2002 (p247)
• Transient Characterization of SiC P-N Diode
  Published in: Silicon Carbide and Related Materials - 1999 (p1343)
• Use of Vacuum as a Gate Dielectric: The SiC VacFET
  Published in: Silicon Carbide and Related Materials 2010 (p657)
• Wide Dynamic Range RF Mixers Using Wide-Bandgap Semiconductors
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p913)