Papers by Author: Philipp Hönicke

Abstract: The continuing shrinking of the component dimensions in ULSI technology requires junction depths in the 20-nm regime and below to avoid leakage currents. These ultra shallow dopant distributions can be formed by ultra-low energy (ULE) ion implantation. However, accurate measurement techniques for ultra-shallow dopant profiles are required in order to characterize ULE implantation and the necessary rapid thermal annealing (RTA) processes.

Abstract: Reference samples were produced for development, benchmarking and comparison of analytical techniques based on mass spectroscopy as TD-GCMS and TOF-SIMS and x-ray analysis as TXRF-NEXAFS. Organic contaminants representing plasticizers, disinfectants and flame retardants were chosen. The contaminants were selected with respect to reliable detection using the above analytical techniques. The stability of the reference samples produced with dethylphtalate, triclosane, and tetrabrombisphenol A on silicon stripes or wafers with a diameter of 200 mm was found to be approx. 10 days. The comparison of the techniques showed that the mass spectroscopy methods allowed reliable qualification of organic surface contamination. TD-GCMS quantifies and identifies the volatile organic compounds whereas TXRF quantifies the carbon contamination, especially the non-volatile, on sample surfaces.

Abstract: The European Integrated Activity of Excellence and Networking for nanoand Micro-Electronics Analysis (ANNA), www.ANNA-i3.net, has addressed the further development and assessment of methodologies for the detection of low concentration inorganic contaminants on and in silicon as well as for novel materials. The comparison of various analytical techniques available to the ANNA partners helped to identify the degree of comparableness of results revealed at different installations. The assessment of improved methodologies as well as the reliability of quantification and calibration procedures of specific analytical techniques such as Total-Reflection X-ray Fluorescence (TXRF) analysis has been of particular interest.

Abstract: The continuous dimensional reduction drives the development of metrology, analysis and characterization for nano and micro electronics. An enormous worldwide R&D effort focuses on the understanding and controlling materials properties and dimensions at atomic level. Crucial for groundbreaking new developments is the availability of appropriate analytical infrastructures providing techniques with information depths well adapted to the nanoscaled objects of interest. This requires widely accessible, independent complementary metrology, analytical techniques, and characterization. For example new materials and the demand of improved detection sensitivities for contaminants provide huge challenges for the capabilities of current analysis equipment and expertise. At the same time, the availability of complementary competences is crucial for advancement of analytical methodologies through cross-comparison, round-robin, and benchmarking of results. This paper describes the formation of an independent analytical infrastructure within Europe having the expertise and competence to solve metrology problems for development of nanotechnologies. Furthermore, a strategy is shown to establish independently operating ‘Golden Laboratories’ for complementary and reliable metrology, analysis, and characterization adapted to the requirements of industrial partners.