Papers by Author: Philippe Garnier

Abstract: In this paper, we investigate the use of a wet cleaner developed to dissolve residues left after plasma etching selectively to aluminum in new applications such as the removal of various resilient ionic and halides-based surface contaminants. The compromise between efficiency and selectivity of this fluorinated acid cleaner makes it an interesting chemistry for many cleaning steps during wafer manufacturing. Two new applications were investigated: the selective removal of fluoride-based defects on aluminum pads and surface decontamination of various ionic metals with low substrate consumption. These studies showed very encouraging results in beakers level tests, but also on partly industrial equipment, opening new possibilities for this cleaner. Indeed, “water lily” defects removal seems to be possible with a low aluminum consumption in TechniClean IK73. Decontamination study carried out in static bath and in single wafer tool showed rather similar results, enabling static bath protocol and ionic metals removal to be validated and VPD-ICPMS results, after a short process time in a single wafer tool were very promising with metal levels close to the lower limit of detection of all elements tested.

Abstract: The removal of particle contamination is key to maximize yield. Some common particle removal techniques are not relevant anymore when complex and fragile structures are present on the surface. This led to the development of new cleaning processes based on innovative concepts to improve particle removal efficiency without any pattern damage. Some of these processes rely on a resist film lift off. One of these particle removal processes is studied in this paper. The process consists in some resist spin-coating followed by a diluted ammonia dispense to remove this film, which results in particle removal. This specific resist film is made of two immiscible organic polymers. A study was conducted to understand how the organization of these two polymers in the film is key for the film lift-off and the cleaning efficiency. This organization was shown to depend on the substrate contact angle and the resist formulation. A surface preparation is required on hydrophobic surface to reduce their water contact angle and ensure the efficiency of the process. As a result, compared to a high velocity aerosol cleaning technique, this resist peeling process requires multiple steps and a significant process time. A Particle Removal Efficiency study was then performed on blanket wafers to determine and understand how the different process parameters impacted on the cleaning efficiency. It led to the optimization of this process efficiency on blanket wafers. A comparison between an optimized process and a high velocity aerosol cleaning technique underlined the potential of such a process. Compared to high velocity aerosol cleaning, it demonstrated higher efficiency on blanket wafers, without causing any pattern damage on patterned wafers. These results lead to promising perspectives for using this process in the cleaning of fragile structure or targeting small particles with high adhesion.

Abstract: Photoresist after implantation is commonly removed either by wet chemical dissolution with sulfuric acid, or by dry ash stripping followed with a wet cleaning. To prevent any photoresist residues, sulfuric acid is still conserved in post ash cleans as additional safety. However, by ensuring sufficient over ash time, SPM (Sulfuric acid Peroxide hydrogen Mixture) chemical need becomes less essential. This paper reevaluates the benefit of SPM after dry ash stripping regarding the environmental context. The advantages of dry ash stripping with clean, compared to wet stripping are outlined. The study introduces prior analyses on defectivity and material consumption. Finally, device matching and yield stability, defined as the main success criteria, are described.

Abstract: Fluorinated chemistries can lead to severe corrosion damage towards silicon and germanium based materials when wafers have a significant amount of electrostatic charges. This corrosion is evidenced on both single wafer and batch tools. It can be prevented by the presence of enough light, and wafer charging can also be eradicated by photo emission with UV light.

Abstract: Pattern collapse in CMOS image sensors is discussed, where silicon pillars are separated by trenches of few microns deep. Both analytical and numerical models are given and match experimental results. The trench profile is also taken into account to predict such collapse.

Abstract: During silicide formation, unreacted NiPt metals is traditionally removed either by aqua regia (ESH concern) or SPM. This latter can easily degrade the device yield in HKMG (High K Metal Gate) nodes if the metal gates (usually TiN based) aren’t perfectly encapsulated. First some new characterizations are presented to better understand the NiPt metal alloy removal, then a new solution is given to be able to remove this alloy without degrading HKMG materials.

Abstract: Silicon nitride is commonly etched by hot orthophosphoric acid. Hot diluted hydrofluoric acid is hereby used as an alternative. Nonetheless, in presence of silicon surfaces, some corrosion has been evidenced, degrading significantly active areas during the STI (Shallow Trench isolation) integration. Oxygen in hot deionized water or hot HF generates this corrosion and selecting a relevant chemical oxide before dispensing hot diluted HF is key in solving the concern.

Abstract: A post-etch residue cleaning formulation, based on balancing the aggressiveness of hydrofluoric acid with its well-known residue removal properties is introduced. In a series of investigations originally motivated by the cleaning challenge provided by high-k dielectric-based residues, a formulation platform is developed that successfully cleans residues resulting from the plasma patterning of tantalum oxide and similar materials while maintaining metal and dielectric compatibility. It is further shown that the fundamental advantages of this solution can be extended to the cleaning of other, more traditional post-etch residues, with no sacrifice in compatibility, as demonstrated by measurements on blanket films and through SEM data.

Abstract: Wet etchant infiltration through photo sensitive resists have been studied with new methodology. This latter enables a very quick response to select wet etchant / polymer compatibility to protect underneath film from being degraded.

Abstract: Still nowadays in integrated circuits manufacturing, few materials patterns are defined by a wet etch on patterned deep UV photoresist. From dies to dies generation, an optical performance improvement is required, hence an evolution with thinner and thinner positive resist. This makes these latter more sensitive to wet chemical etchant through the polymer, reducing their protection of the underneath material. Following characterizations enable a clear understanding of BHF (Buffered HF) benefits versus diluted HF during a gate oxide definition.