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Articles by author: Phillippe Godignon

• 2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility
  Published in: Silicon Carbide and Related Materials 2009 (p1207)
• 300ºC SiC Blocking Diodes for Solar Array Strings
  Published in: Silicon Carbide and Related Materials 2008 (p925)
• 4.5 kV-8 A SiC-Schottky Diodes / Si-IGBT Modules
  Published in: Silicon Carbide and Related Materials 2005 (p1163)
• 4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N₂O
  Published in: Silicon Carbide and Related Materials 2004 (p673)
• 4H-SiC MOSFETs Using Thermal Oxidized Ta₂Si Films as High-k Gate Dielectric
  Published in: Silicon Carbide and Related Materials 2004 (p713)
• 6H-SiC Diodes with Cellular Structure to Avoid Micropipe Effects
  Published in: Silicon Carbide and Related Materials - 1999 (p1355)
• 6H-SiC Schottky Barrier Diodes with Nearly Ideal Breakdown Voltage
  Published in: Silicon Carbide and Related Materials - 1999 (p1219)
• A Fully Electrically Isolated Package for High Temperature SiC Sensors
  Published in: Silicon Carbide and Related Materials 2011 (p925)
• A Highly Effective Edge Termination Design for SiC Planar High Power Devices
  Published in: Silicon Carbide and Related Materials 2003 (p1253)
• Ab Initio Calculations of B Diffusion in SiC
  Published in: Silicon Carbide and Related Materials 2001 (p553)
• AFM and Raman Studies of Graphene Exfoliated on SiC
  Published in: Silicon Carbide and Related Materials 2008 (p215)
• An Effective High-Voltage Termination for SiC Planar pn Junctions for Use in High-Voltage Devices and UV Detectors
  Published in: Silicon Carbide and Related Materials 2001 (p1301)
• Analysis of Aluminium Ion Implantation Damage into 6H-SiC Epilayers
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p733)
• Channeled Implants in 6H Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 1999 (p889)
• Characterisation of HfO₂/Si/SiC MOS Capacitors
  Published in: Silicon Carbide and Related Materials 2010 (p674)