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Articles by author: R. Murray

• Raman Spectroscopic Study of Si Local Vibrational Modes in GaAs
  Published in: Defects in Semiconductors 15 (p815)
• Studies of the DX Center Using Hydrostatic Pressure
  Published in: Physics of DX Centers in GaAs Alloys (p121)
• The Assignment of the 78/203meV Double Acceptor in GaAs to B_As Impurity Antisite Centers
  Published in: Defects in Semiconductors 17 (p229)