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Articles by author: Rafał Bożek

• Graphene Growth on C and Si-Face of 4H-SiC – TEM and AFM Studies
  Published in: Silicon Carbide and Related Materials 2009 (p577)
• Growth of 4H-SiC Crystals on the 8° Off-Axis 6H-SiC Seed by PVT Method
  Published in: Silicon Carbide and Related Materials 2009 (p17)
• Growth of 4H-SiC Single Crystals on 6H-SiC Seeds with an Open Backside by PVT Method
  Published in: Silicon Carbide and Related Materials 2008 (p15)
• Growth of 6H-SiC Single Crystals under Quasi-Equilibrium Conditions
  Published in: Silicon Carbide and Related Materials 2007 (p15)
• Growth of Graphene Layers on Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2008 (p199)
• Growth Rate and Thickness Uniformity of Epitaxial Graphene
  Published in: Silicon Carbide and Related Materials 2009 (p569)
• Isotopic Structure and the Jahn-Teller Effect in Fe-Doped III-V Materials
  Published in: Defects in Semiconductors 17 (p335)
• Reinvestigation of the Optical Properties of the Iron Impurity in GaAs and InP
  Published in: Defects in Semiconductors 16 (p729)
• TEM Investigations of Graphene on 4H-SiC(0001)
  Published in: Silicon Carbide and Related Materials 2008 (p207)