HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Reinhard Krause-Rehberg

• Annealing Process of Defects in Epitaxial SiC Induced by He and Electron Irradiation: Positron Annihilation Study
  Published in: Silicon Carbide and Related Materials 2000 (p537)
• Application of the Positron Lifetime Spectroscopy as a Method of Non-Destructive Testing
  Published in: Positron Annihilation - ICPA-10 (p989)
• Atomic Environment of Positrons Annihilating in Different Parts of Cz-Si Single Crystal
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p507)
• Combination of Positron Annihilation and Scanning Tunneling Microscopy: A Unique Approach to Characterize Defects
  Published in: Positron Annihilation - ICPA-11 (p494)
• Configuration of DV Complexes In Ge: Positron Probing of Ion Cores
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p89)
• Defect Control in As-Rich GaAs
  Published in: Defects in Semiconductors 19 (p951)
• Defect Studies in BaTiO₃ Ceramics Using Positron Annihilation Spectroscopy
  Published in: Positron Annihilation - ICPA-12 (p144)
• Deformation Induced Defects in GaAs - The Role of Dislocations
  Published in: Positron Annihilation - ICPA-11 (p497)
• Detailed Microscopic Defect Identification in GaAs
  Published in: Positron Annihilation - ICPA-12 (p76)
• Effects of Illumination on Positron Lifetime of Electron Irradiated n-type 6H-SiC
  Published in: Positron Annihilation - ICPA-12 (p126)
• Equilibrium Vacancies in Te-Doped GaAs Studied by Positron Annihilation
  Published in: Defects in Semiconductors 19 (p905)
• Experimental Determination of the Specific Positron Trapping Rates in Semiconductors
  Published in: Positron Annihilation - ICPA-10 (p427)
• Fluence Dependence of the Formation of Open-Volume Defects in Silicon After Ion Implantation
  Published in: Positron Annihilation - ICPA-11 (p472)
• Formation of Vacancy Clusters During Copper Diffusion in Semiinsulating GaAs
  Published in: Positron Annihilation - ICPA-12 (p111)
• Generation of Point Defects during Plastic Deformation of InP
  Published in: Defects in Semiconductors 18 (p1267)