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Articles by author: Remigijus Vasiliauskas

• Employing Discontinuous and Continuous Growth Modes for Preparation of AlN Nanostructures on SiC Substrates
  Published in: Silicon Carbide and Related Materials 2006 (p1031)
• Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy
  Published in: Silicon Carbide and Related Materials 2009 (p179)
• Macrodefects in Cubic Silicon Carbide Crystals
  Published in: Silicon Carbide and Related Materials 2009 (p375)
• On Applicability of Time-Resolved Optical Techniques for Characterization of Differently Grown 3C-SiC Crystals and Heterostructures
  Published in: HeteroSiC & WASMPE 2011 (p159)
• Progress in 3C-SiC Growth and Novel Applications
  Published in: HeteroSiC & WASMPE 2011 (p3)
• Seeding Layer Influence on the Low Temperature Photoluminescence Intensity of 3C-SiC Grown on 6H-SiC by Sublimation Epitaxy
  Published in: HeteroSiC & WASMPE 2011 (p149)
• Structural Properties of 3C-SiC Grown by Sublimation Epitaxy
  Published in: Silicon Carbide and Related Materials 2008 (p181)
• Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds
  Published in: Silicon Carbide and Related Materials 2009 (p175)
• Two-Dimensional Nucleation of Cubic and 6H Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2008 (p189)