Papers by Author: Rong Yan Chuai

Abstract: The previous research showed that highly doped polysilicon nanofilms (PSNFs) have a high gauge factor and stable temperature characteristics, promoting their applications in piezoresistive sensors. For correcting the resistance deviation and improving the resistance matching of sensing elements, the electrical trimming (ET) characteristics of PSNFs deposited by LPCVD at different temperatures were studied. By the interstitial-vacancy (IV) model, the resistance falloff in trimming phenomenon is considered as a result of the decrease of scattering centers caused by the recombination of IV pairs. By modeling grain boundaries (GBs) as the accumulation of IV pairs (basic defects), it is believed that IV pairs can recombine layer-by-layer under the energy excitation of joule heat generated by high current conduction. The experiment results show that the threshold current density for ET of PSNFs is an order of magnitude lower than that of polysilicon common films, while the trimming accuracy and stability of directly deposited PSNFs are superior to the recrystallized ones. Finally, it is gained that reducing amorphous phases at GBs by optimizing deposition temperature can improve ET characteristics of PSNFs.

Abstract: The gauge factor and nonlinearity of 80nm polysilicon nanofilms with different doping concentration were tested. The experimental results show that, from 8.1×1018cm-3 to 2.0×1020cm-3, the gauge factors first increase then decrease, which like the common polysilicon films (thickness is larger than 100nm). From 2.0×1020cm-3 to 7.1×1020cm-3, the gauge factors do not change with doping concentration almost, which can be explained by tunneling piezoresistive theory. When doping concentration is low than 4.1×1019cm-3, the nonlinearities are big, and the nonlinearities become small when doping concentration is high than 4.1×1019cm-3. The nonlinearity is related to the occupied condition of trapping states in grain boundary. The longitudinal gauge factor and nonlinearity are smaller than transverse ones. Take the gauge factor and nonlinearity both into consideration, the optimal doping concentration should be 4.1×1019cm-3. The conclusions are very useful for design and fabrication of polysilicon nanofilms piezoresistive sensor.

Abstract: The polysilicon nanofilms have significant piezoresistive characteristics. In this paper, an analysis of tunneling piezoresistive effect of p-type polysilicon nanofilms is presented based on the experimental data. The analysis results show that the tunneling piezoresistive effect is much remarkable than piezoresistive effect of neutral region, and the former is about 1.3 to 1.5 times of the latter. The higher is doping concentration, the more remarkable tunneling piezoresistive effect is. This advantage can be utilized to improve the temperature characteristics of polysilicon piezoresistive sensor.