Papers by Author: Rui M.S. Martins

Abstract: The Shape Memory Effect on Ni-Ti thin films is strongly dependent on several factors: (i) chemical composition of the matrix, (ii) presence of precipitates and (iii) preferential orientation. Ni-Ti alloys derive their unique nonlinear and anisotropic mechanical behavior from stress-induced martensitic transformations, where the resulting strains are affected by crystallographic orientation. The influence of the texture on the transformation characteristics of Ni-Ti thin films is discussed on the basis of models and experimental results of the literature. A brief review of the texture build-up on thin films obtained by different fabrication techniques (sputtering, melt spinning, diffusion treatment of ultra-fine laminates, …) is presented. Details about in situ techniques allowing the identification of the preferential orientation during the fabrication process are presented. The processing parameters that more strongly influence the preferential orientation of the Ni-Ti thin films are identified. The mechanisms for the different microstructures are summarized and a special emphasis is put on the type of preferential orientation and its evolution along the processing time.

Abstract: Ni-Ti Shape Memory Alloy thin films are suitable materials for microelectromechanical devices. During the deposition of Ni-Ti thin films on Si substrates, there exist interfacial diffusion and chemical interactions at the interface due to the high temperature processing necessary to crystallize the film. For the present study, Ni-Ti thin films were prepared by magnetron cosputtering from Ni-Ti and Ti targets in a specially designed chamber mounted on the 6-circle goniometer of the ROssendorf BeamLine (ROBL-CRG) at ESRF, Grenoble (France). The objective of this study has been to investigate the interfacial structure resulting from depositions (at a temperature of ≈ 470°C) on different substrates: naturally oxidized Si(100), Si(111) and poly-Si substrates. A detailed High-Resolution TEM analysis of the interfacial structure has been performed. When Ni-Ti is deposited on Si(100) substrate, a considerable diffusion of Ni into the substrate takes place, resulting in the growth of semi-octaeder A-NiSi2 silicide. In the case of Ni-Ti deposited on Si(111), there appears an uniform thickness plate, due to the alignment between substrate orientation and the [111]-growth front. For Ni-Ti deposited on poly-Si, the diffusion is inhomogeneous. Preferential diffusion is found along the columnar grains of poly-Si, which are favourably aligned for Ni diffusion. These results show that for the Ni-Ti/Si system, the morphology of the diffusion interface is strongly dependent on the type of substrates.

Abstract: Ni-Ti SMA are smart materials undergoing first order martensitic transformations driven by temperature and/or stress. In the form of film they are very attractive candidates for microelectro- mechanical system (MEMS) applications. Future directions include the production of functionally graded films by changing deliberately the ratio Ti/Ni across their thickness. However, for the successful development of this type of films, it is important to characterize, model and control the variations in composition, crystalline structure and transformation temperatures. Our approach is in-situ XRD study of the actual growth of the films of varying composition along the thickness carried out using a deposition chamber installed at a synchrotron radiation beamline. These studies were complemented with ex-situ analysis techniques. The results achieved on a Ni-Ti film co-sputtered from Ni-Ti and Ti targets on a TiN buffer layer are presented in this paper. The deposition started by using optimised parameters for a near equiatomic composition. After 1 h (≈330 nm thick film), the Ti power was increased from 20 to 25 W, leading to the precipitation of Ti2Ni. The evolution of the lattice parameter values of the B2 phase, calculated from the corresponding XRD data, is clearly linked with the increase of the Ti power. The depth profile of the atomic concentrations determined by Auger Electron Spectroscopy (AES) is in agreement with the in situ XRD results. The temperature dependence of the electrical resistivity was used to monitor phase transformations, Scanning Electron Microscopy (SEM) has shown the presence of twinned martensite on the film’s surface at room temperature.