Papers by Author: S.D. Pappas

Abstract: Cu and Ni from CuNi metallic targets (composition 20-80 and 46-54 at.%) are deposited on Corning glass, quartz and the native oxide of Si (100) wafers by direct current magnetron sputtering in a high vacuum chamber (base pressure 5 x 10^-5 mbar). The CuNi films, with thickness 40 200 nm, are post annealed at temperatures 400 - 500 °C in a furnace under atmospheric air in order to be fully oxidized. The structure of the films is studied by x-ray diffraction experiments. Phase separation of the oxides is evident. The optical properties are studied via ultraviolet-visible light absorption spectroscopy. The spectra of CuNi-oxide films are compared with the spectra of the pure CuO and NiO films. Features originating from both CuO and NiO are detected in the spectra of the CuNi-oxide thin films.

Abstract: In the Current Study, the Structural Characteristics of Siox Thin Films Grown by Magnetron Sputtering on Si Substrates Are Reported. High Resolution Transmission Electron Microscopy Revealed the Formation of Amorphous Siox Films for the as-Deposited Samples, as Well as the Ones Annealed in Ambient Air for 30 Min at 950oC and of Si Nanocrystals, Embedded in Amorphous Siox, after Ar Annealing for 1-4 Hours at 1000oC. the Nanocrystals, with Sizes up to 6 Nm, Predominately Exhibit {111} Lattice Planes. Energy-Dispersive X-Ray Analysis Showed that the Si/O Ratio Is between 0.5-1, I.e. the Amorphous Films Comprise of a Mixture of Sio2 and Sio. Phase Images and Corresponding Strain Maps Created Using Fourier Filtering Revealed a Uniform Contrast in the Nanocrystals, which Shows that the Si Lattice Constant Does Not Vary Significantly. the Residual Strain Variations, around 4%, May Account for the Possible Existence of a Small Percentage of Highly Disordered Si or Siox Residual Clusters inside the Regular Si Matrix, in Full Agreement with Photoluminescence Measurements Performed on the same Materials.

Abstract: . In this work, we present a simple method to fabricate high quality Ni/NiO multilayers with the use of a single magnetron sputtering head. Namely, at the end of the deposition of each single Ni layer, air is let to flow into the vacuum chamber through a leak valve. Then, a very thin NiO layer (~ 1nm) is formed by natural oxidation. The process is reproducible and the result is the formation of a multilayer with excellent layering. Magnetization hysteresis loops recorded at 5 K and room temperature reveal a tendency for perpendicular magnetic anisotropy as the thickness of the individual Ni layers decreases. It is shown that the Ni/NiO interface has sizeable positive surface/interface anisotropy, i.e. it favors the development of perpendicular magnetic anisotropy. This is rather unusual for a Ni-based multilayered system and may render Ni/NiO multilayers useful for magneto-optical recording applications.

Abstract: Thin Cu films of thickness 0.4 – 150 nm were deposited via radio frequency magnetron sputtering on Si(100) wafers, corning glass and quartz. Subsequently the Cu films were oxidized in ambient air at 230oC and 425oC in order to produce single-phase Cu2O and CuO, respectively. Selected samples were measured in the transmission geometry with the help of an ultraviolet – visible spectrophotometer. From the absorption spectra of the films, it was found that the gap EB for the dipole allowed transitions showed blue shifts of about 1.2 eV for the Cu2O thinnest film (0.75 nm), whereas the Edirect for the direct gap transitions showed blue shifts of about 0.16 eV for the CuO thinnest film (0.7 nm). The blue shift of the energy gap in the copper-oxide semiconductors is an indication of the presence of strong quantum confinement effects.