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Articles by author: S. Dannefaer

• Beyond 10⁶-Count Lifetime Spectra Using Hamamatsu Tubes and Pilot U
  Published in: Positron Annihilation - ICPA-9 (p1841)
• Defects in InP Investigated by the Positron Annihilation Technique
  Published in: Defects in Semiconductors 16 (p1021)
• Effects of Boron Doping on the Annealing Characteristics of Cz-Silicon
  Published in: Defects in Semiconductors 15 (p225)
• Heat-Treatment Induced Modifications of Porous Silicon
  Published in: Defects in Semiconductors 19 (p1725)
• High Temperature Investigations of Silicon by Means of Positron Annihilation
  Published in: Defects in Semiconductors 14 (p103)
• Impurity-Vacancy Complexes Formed by Electron Irradiation of Czochralski Silicon
  Published in: Defects in Semiconductors 19 (p581)
• Native and Electron Irradiation Induced Defects in 6H-SiC
  Published in: Defects in Semiconductors 19 (p721)
• On the Influence of Doping and Annealing on Oxygen-Related Defects in Silicon
  Published in: Defects in Semiconductors 14 (p869)
• On the Interplay between Vacancies and Interstitial Clusters in CZ-Grown Silicon
  Published in: Shallow Impurities in Semiconductors IV (p307)
• Positron Annihilation in Electron Irradiated Silicon
  Published in: Defects in Semiconductors 15 (p1157)
• Positron Lifetime Investigations of Electron Irradiated InP
  Published in: Defects in Semiconductors 17 (p299)
• Shallow Positron Traps in Gallium Arsenide
  Published in: Defects in Semiconductors 15 (p893)
• The Role of Nitrogen in the Annealing of Vacancies in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p481)
• Vacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron Annihilation
  Published in: Silicon Carbide and Related Materials - 2002 (p173)