Papers by Author: S. Lallouche

Abstract: This work deals with Al-Cu thin films, deposited onto glass substrates by RF (13.56MHz) magnetron sputtering, and annealed at 773K. The film thickness was approximately the same 3-4µm. They are characterized with respect to microstructure, grain size, microstrain, dislocation density and resistivity versus copper content. Al (Cu) deposits containing 1.8, 7.21, 86.17 and 92.5at%Cu have been investigated. The use of X-ray diffraction analysis and transmission electron microscopy lead to the characterization of different structural features of films deposited at room temperature (< 400K) and after annealing (773K). The resistivity of the films was measured using the four-point probe method. The microstrain profile obtained from XRD thanks to the Williamson-Hall method shows an increase with increasing copper content.

Abstract: In this work we are interested by the decomposition behaviour after heat treatment at 500°C of nanostructured Al-Cu deposits, prepared by radio frequency (13.56MHz) magnetron sputtered from composite targets. The use of X-ray diffraction leads to the characterization of different structures and the estimation of grain size and dislocation density. The grain size of the films is found to increase with annealing. The dislocation density is observed to exhibit a decrease trend with annealing temperature which leads to a reduction in the concentration of lattice imperfections A specific thermal study of the Al-Cu deposits, by combined thermal analysis (TDA/TG) permit to follow the structural behavior of the deposits with heat treatment. For Al-7.21at%Cu deposit, the exothermic peak convolution may be due to the elimination of micro deformations present in the sample.