Papers by Author: S.X. Dou

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Abstract: Pulsed magnetic field was first employed in the study on MgB2 superconductors. Superconductivity properties and microstructures of Zn and SiC doped MgB2 were discussed in this paper. The superconductors showed different superconductivities after magnetic sintering. Critical current density and flux pinning force were relevant to the dopants properties in MgB2. Grains in the pulsed magnetic processed MgB2 matrix were smaller than those in the normal processed one. The refinement microstructures have caused the critical current density (Jc) anisotropy in both the Zn and SiC doped MgB2.
2063
Abstract: MgB2 thin films have been coated on Nb substrates without any buffer layers. An in situ pulsed laser deposition (PLD) method was used to prepare the coating. The interface between films and substrates has been characterized by scanning electron microscopy (SEM). Surface impedance has been measured for the MgB2 films on Nb substrates. The results were discussed with regard to the potential large scale applications in superconducting RF cavities.
2027
Abstract: MgB2 polycrystalline bulk samples with additions of 0, 5, 10 and 20% wt.% nano-sized BN powders were prepared using the reaction in-situ method. All the samples were sintered at 850°C for 1h in Ar. All the samples were characterized by X-ray diffraction, scanning electron microscopy (SEM) and magnetic measurements. The X-ray diffraction patterns show that the BN does not react with Mg and B during the heat treatment and remains as a separate phase. The synthesized materials thus contain two separate BN and MgB2 phases. In addition, the samples contain a small, almost constant amount of MgO. SEM shows that the samples contain MgB2 grains with average grain sizes of about 250 nm. Magnetic measurement results show that the critical current density and irreversibility fields decrease slightly as the BN level increases. The Tc drops slightly from 38.9 to 38.2 K and has a sharp transition with a transition width of less than 1 K. The field dependence of Jc for all the samples is also presented.
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