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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by author: Salvatore Di Franco
25 papers on 2 pages:
1
[2]
[next]
4H-SiC Schottky Array Photodiodes for UV Imaging Application Based on the Pinch-off Surface Effect
Published in:
Silicon Carbide and Related Materials 2006
(p945)
Comparison between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results
Published in:
Silicon Carbide and Related Materials - 2002
(p827)
Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC
Published in:
Gettering and Defect Engineering in Semiconductor Technology XIII
(p493)
Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC
Published in:
Silicon Carbide and Related Materials 2009
(p713)
Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes
Published in:
Silicon Carbide and Related Materials 2004
(p429)
Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier
Published in:
Silicon Carbide and Related Materials 2007
(p1341)
Electrical Properties of Ni/GaN Schottky Contacts on High-Temperature Annealed GaN Surfaces
Published in:
Silicon Carbide and Related Materials 2008
(p959)
Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process
Published in:
Silicon Carbide and Related Materials 2005
(p163)
Evolution of the Electrical Behaviour of GaN and AlGaN Materials after High Temperature Annealing and Thermal Oxidation
Published in:
Silicon Carbide and Related Materials 2009
(p1211)
Impact of Surface Morphology on the Electrical Properties of Al/Ti Ohmic Contacts on Al-Implanted 4H-SiC
Published in:
Silicon Carbide and Related Materials 2010
(p413)
Influence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN Heterostructures
Published in:
Silicon Carbide and Related Materials 2008
(p967)
Low Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar Structure
Published in:
Silicon Carbide and Related Materials - 2002
(p819)
Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001)
Published in:
Silicon Carbide and Related Materials 2011
(p637)
New Achievements on CVD Based Methods for SiC Epitaxial Growth
Published in:
Silicon Carbide and Related Materials 2004
(p67)
On the Viability of Au/3C-SiC Schottky Barrier Diodes
Published in:
Silicon Carbide and Related Materials 2009
(p677)
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