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Articles by author: Sandrine Juillaguet

• 4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments
  Published in: Silicon Carbide and Related Materials 2001 (p1435)
• 6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2009 (p347)
• 8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or Double 3C Quantum Well?
  Published in: Silicon Carbide and Related Materials 2008 (p339)
• Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-Standing 3C-SiC
  Published in: Silicon Carbide and Related Materials 2008 (p49)
• Characterization of Bulk <111> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method
  Published in: Silicon Carbide and Related Materials 2005 (p99)
• Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method
  Published in: Silicon Carbide and Related Materials 2003 (p91)
• Comparative Evaluation of Free-Standing 3C-SiC Crystals
  Published in: Silicon Carbide and Related Materials 2004 (p229)
• Comparative Studies of <0001> 4H-SiC Layers Grown with Either Silane or HexaMethylDisilane / Propane Precursor Systems
  Published in: Silicon Carbide and Related Materials 2003 (p217)
• Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL Measurements
  Published in: Silicon Carbide and Related Materials 2003 (p775)
• Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2010 (p314)
• Electric-Field Screening Effects in the Micro-Photoluminescence Spectra of As-Grown Stacking Faults in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2006 (p351)
• Evaluation of p-Type Doping for (1,1,-2,0) Epitaxial Layers Grown on α-Cut (1,1,-2,0) 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2004 (p117)
• Excitation Power Dependence of Al-Related Features in the LTPL Spectra of 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p449)
• Experimental Investigation of 4H-SiC Bulk Crystal Growth
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p17)
• Growth and Characterization of ¹³C Enriched 4H-SiC for Fundamental Materials Studies
  Published in: Silicon Carbide and Related Materials 2006 (p13)