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Articles by author: Sang Kwon Lee

• A Manipulation of Semiconducting GaN Nanowires by Dielectrophoresis Aligned Assembly Deposition (DAAD)
  Published in: Silicon Carbide and Related Materials 2006 (p1023)
• Die Bonding Issues on Silicon Carbide Diodes
  Published in: Silicon Carbide and Related Materials 2005 (p875)
• Direct Electrical Characteristics of GaN Nanowire Field Effect Transistor (FET) without Assistance of E-Beam Lithography (EBL)
  Published in: Silicon Carbide and Related Materials 2005 (p1549)
• Dry Etching and Metallization Schemes in a GaN/SiC Heterojunction Device Process
  Published in: Silicon Carbide and Related Materials - 1999 (p1049)
• Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics
  Published in: Silicon Carbide and Related Materials 2008 (p235)
• Fabrication and Electrical Transport Properties of CVD Grown Silicon Carbide Nanowires (SiC NWs) for Field Effect Transistor
  Published in: Silicon Carbide and Related Materials 2005 (p771)
• Fracture and Deformation Damage Accumulation in Tough Ceramics
  Published in: The Science of Engineering Ceramics II (p3)
• Influence of Trenching Effect on the Characteristics of Buried-Gate SiC Junction Field-Effect Transistors
  Published in: Silicon Carbide and Related Materials 2001 (p1235)
• Low Resistance Cathode Metallization and Die-Bonding in Silicon Carbide P-N Junction Diodes
  Published in: Silicon Carbide and Related Materials 2006 (p717)
• Reduction of the Barrier Height and Enhancement of Tunneling Current of Titanium Contacts Using Embedded Au Nano-Particles on 4H and 6H Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2001 (p937)