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Articles by author: Shinichi Nishizawa

• A Method of Reducing Micropipes in Thin Films by Using Sublimation Growth
  Published in: Silicon Carbide and Related Materials 2001 (p107)
• Activation Treatment of Ion Implanted Dopants Using Hybrid Super RTA Equipment
  Published in: Silicon Carbide and Related Materials 2005 (p803)
• Beryllium Implantation Doping of Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 1999 (p953)
• Bulk and Surface Effects on the Polytype Stability in SiC Crystals
  Published in: Silicon Carbide and Related Materials 2011 (p41)
• Calculation of Lattice Constant of 4H-SiC as a Function of Impurity Concentration
  Published in: Silicon Carbide and Related Materials 2009 (p247)
• Challenges of 4H-SiC MOSFETs on the C(000-1) Face toward the Achievement of Ultra Low On-Resistance
  Published in: Silicon Carbide and Related Materials 2007 (p907)
• Characterization of Inclusions in SiC Bulk Crystals Grown by Modified Lely Method
  Published in: Silicon Carbide and Related Materials 2001 (p75)
• Continuous Growth of SiC Single Crystal by the Spray Dried Powder Made of Ultra-Fine Particle Precursors
  Published in: Silicon Carbide and Related Materials 2003 (p131)
• Defect Analysis of SiC Sublimation Growth by the In-Situ X-Ray Topography
  Published in: Silicon Carbide and Related Materials 2000 (p295)
• Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping
  Published in: Silicon Carbide and Related Materials 2006 (p239)
• Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals
  Published in: Silicon Carbide and Related Materials 2004 (p315)
• Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth
  Published in: Silicon Carbide and Related Materials 2001 (p111)
• Doping Concentration Optimization for Ultra-Low-Loss 4H-SiC Floating Junction Schottky Barrier Diode (Super-SBD)
  Published in: Silicon Carbide and Related Materials 2008 (p655)
• Effect of Low Frequency Magnetic Field on SiC Solution Growth
  Published in: Silicon Carbide and Related Materials 2010 (p32)
• Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid
  Published in: Silicon Carbide and Related Materials - 1999 (p103)