Papers by Author: Shun-ichi Nakamura

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Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition
Authors: Masashi Kato, Shun Ichiro Tanaka, Masaya Ichimura, Eisuke Arai, Shun-ichi Nakamura, Tsunenobu Kimoto
381
Surface Mechanisms in Homoepitaxial Growth on α-SiC{0001}-Vicinal Faces
Authors: Shun-ichi Nakamura, Tsunenobu Kimoto, Hiroyuki Matsunami
163
SiC Lateral Super-Junction Diodes Fabricated by Epitaxial Growth
Authors: Mineo Miura, Shun-ichi Nakamura, Jun Suda, Tsunenobu Kimoto, Hiroyuki Matsunami
859
Wide-Area Homoepitaxial Growth of 6H-SiC on Nearly On-Axis (0001) by Chemical Vapor Deposition
Authors: Shun-ichi Nakamura, Tsunenobu Kimoto, Hiroyuki Matsunami
149
Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition
Authors: Jun Suda, Shun-ichi Nakamura, Mineo Miura, Tsunenobu Kimoto, Hiroyuki Matsunami
659
Breakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiC
Authors: Shun-ichi Nakamura, Hironori Kumagai, Tsunenobu Kimoto, Hiroyuki Matsunami
651
Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition
Authors: Shun-ichi Nakamura, Tsunenobu Kimoto, Hiroyuki Matsunami
183
Recent Achievements and Future Challenges in SiC Homoepitaxial Growth
Authors: Tsunenobu Kimoto, S. Nakazawa, Keiko Fujihira, T. Hirao, Shun-ichi Nakamura, Yi Chen, K. Hashimoto, Hiroyuki Matsunami
165
Growth of SiC on 6H-SiC {01-14} Substrates by Gas Source Molecular Beam Epitaxy
Authors: Shun-ichi Nakamura, Tomoaki Hatayama, Tsunenobu Kimoto, Takashi Fuyuki, Hiroyuki Matsunami
201
In-Situ RHEED Analysis During α-SiC Homoepitaxy on (0001)Si- and (000-1)C-Faces by Gas Source Molecular Beam Epitaxy
Authors: Tomoaki Hatayama, Takashi Fuyuki, Shun-ichi Nakamura, K. Kurobe, Tsunenobu Kimoto, Hiroyuki Matsunami
361
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