HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Shun-ichi Nakamura

• Bio-Organic Material Detection using Hydroxyapatite Composite QCM Sensors
  Published in: Electroceramics in Japan II (p269)
• Breakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p651)
• Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2001 (p183)
• Growth of SiC on 6H-SiC {01-14} Substrates by Gas Source Molecular Beam Epitaxy
  Published in: Silicon Carbide and Related Materials - 1999 (p201)
• In-Situ RHEED Analysis During α-SiC Homoepitaxy on (0001)Si- and (000-1)C-Faces by Gas Source Molecular Beam Epitaxy
  Published in: Silicon Carbide and Related Materials - 1999 (p361)
• Optical Transitions and Exciton Binding Energies in GaN Grown along Various Crystallographic Orientations
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1265)
• Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2004 (p381)
• Recent Achievements and Future Challenges in SiC Homoepitaxial Growth
  Published in: Silicon Carbide and Related Materials 2001 (p165)
• Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2001 (p659)
• SiC Lateral Super-Junction Diodes Fabricated by Epitaxial Growth
  Published in: Silicon Carbide and Related Materials - 2002 (p859)
• Surface Mechanisms in Homoepitaxial Growth on α-SiC{0001}-Vicinal Faces
  Published in: Silicon Carbide and Related Materials 2003 (p163)
• Wide-Area Homoepitaxial Growth of 6H-SiC on Nearly On-Axis (0001) by Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials - 2002 (p149)