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Articles by author: Sima Dimitrijev

• SiC/SiO₂ Interface States: Properties and Models
  Published in: Silicon Carbide and Related Materials 2004 (p563)
• A P-Channel MOSFET on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p1401)
• Characterization of Non-Equilibrium Charge of MOS Capacitors on p-Type 4H SiC
  Published in: Silicon Carbide and Related Materials 2003 (p1365)
• Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures
  Published in: Silicon Carbide and Related Materials 2009 (p689)
• Effects of Initial Nitridation on the Characteristics of SiC-SiO₂ Interfaces
  Published in: Silicon Carbide and Related Materials - 2002 (p583)
• Electronic Properties of SiON/HfO₂ Insulating Stacks on 4H-SiC (0001)
  Published in: Silicon Carbide and Related Materials 2003 (p1361)
• Experimental Evaluation of Different Passivation Layers on the Performance of 3kV 4H-SiC BJTs
  Published in: Silicon Carbide and Related Materials 2009 (p661)
• Improving SiO₂ Grown on P-Type 4H-SiC by NO Annealing
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p869)
• Indications for Nitrogen-Assisted Removal of Carbon from SiO₂-SiC Interface
  Published in: Silicon Carbide and Related Materials 2000 (p655)
• Investigation of SiO₂-SiC Interface by High-Resolution Transmission Electron Microscope
  Published in: Silicon Carbide and Related Materials 2005 (p975)
• Passivation of the Oxide/4H-SiC Interface
  Published in: Silicon Carbide and Related Materials 2001 (p973)
• The SiC-SiO₂ Interface: A Unique Advantage of SiC as a Wide Energy-Gap Material
  Published in: Silicon Carbide and Related Materials 2003 (p1263)
• Traps at the Interface of 3C-SiC/SiO₂-MOS-Structures
  Published in: Silicon Carbide and Related Materials - 2002 (p551)
• XPS Analysis of SiO₂/SiC Interface Annealed in Nitric Oxide Ambient
  Published in: Silicon Carbide and Related Materials - 1999 (p399)