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Papers by Author: Simon Y.M. Chooi

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Angled XPS Analysis of Low-k Dielectric Surfaces after Cleaning

Authors: Y.S. Tan, Simon Y.M. Chooi, Chian-Yuh Sin, Ping-Yu Ee, M.P. Srinivasan, Simo Olavi Pehkonen

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Occurrence of Arsenic-Based Defects and Techniques for Their Elimination

Authors: Felicia Goh, Christopher Lim, Vincent Sih, Zainab Ismail, Simon Y.M. Chooi

Abstract: Arsenic based defects were found on the surfaces of advanced CMOS patterned wafers after the pre-silicidation HF clean. Investigations into the mechanism of formation were done using representative As-implanted bare silicon, polysilicon and HDP silicon oxide films. The nature and composition of these As-based defects are believed to be arsenic and arsenic oxide. Methods of defect removal include the application of hydrogen peroxide containing solutions and hydrogen plasma dry cleaning.

Cleaning after Contact Etching of Multi-Film Stack and Cobalt Disilicide: An XPS Study

Authors: Simon Y.M. Chooi, Christopher Lim, Wen Jun Liu, Ping-Yu Ee

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Wet Oxide Etching of Dual Gate Oxide for 0.13μm Technologies and Beyond: Interaction with Photoresist and Equipment

Authors: Simon Y.M. Chooi, Sang-Yee Loong, Christopher Lim, Zainab Ismail, Tjin-Tjin Tjoa

Post Polysilicon Etch (Incorporating DUV Resist an BARC) Polymer Cleaning

Authors: Simon Y.M. Chooi, Ping-Yu Ee, B.-M. Seah, Mei Sheng Zhou

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