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Articles by author: Sokrates T. Pantelides

• Oxidation-Induced Epilayer Carbon Di-Interstitials as a Major Cause of Endemically Poor Mobilities in 4H-SiC/SiO₂ Structures
  Published in: Silicon Carbide and Related Materials 2011 (p445)
• Passivation of the 4H-SiC/SiO₂ Interface with Nitric Oxide
  Published in: Silicon Carbide and Related Materials 2001 (p967)
• Photo Resist Stripping Using an Alkaline Accelerator Containing Wet-Vapor
  Published in: Ultra Clean Processing of Silicon Surfaces V (p231)
• Point Defects in Semiconductors - Then and Now
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p237)
• Properties of Ni₂MnGa Shape Memory Alloy Prepared by Spark Plasma Sintering
  Published in: Shape Memory Materials (p489)
• Si/SiO₂ and SiC/SiO₂ Interfaces for MOSFETs – Challenges and Advances
  Published in: Silicon Carbide and Related Materials 2005 (p935)
• The Effects of Phosphorus at the SiO₂/4H-SiC Interface
  Published in: Silicon Carbide and Related Materials 2011 (p743)
• Theoretical Determination of the Vacancy Migration Energy in Silicon
  Published in: Defects in Semiconductors 14 (p115)
• Vacancy Formation and Vacancy-Induced Structural Transformation in Si Grain Boundaries
  Published in: Intergranular and Interphase Boundaries in Materials (p161)