Papers by Author: Soon Chul Ur

Abstract: Poly(ether ketone)s (PEK) containing 25-75 mol % valeric acid were prepared with bisphenol A, 4,4-dichlorobenzophenone and 4,4-Bis(4-hydroxylphenyl)valeric acid using potassium carbonate in DMAc (dimethyl acetami de) at 165 °C. Copolymers containing carboxylacid group were reduced to hydroxy group by BH3 solution 1M in THF and NaBH4 co-catalyst. Sulfonated poly(ether ketone)s (S-PEK) were obtained by reaction of 1,3-propanesultone and the reduced copolymer (PEK-OH) with sodium methoxide. A series of copolymers were studied by 1H-NMR spectroscopy, differential scanning calorimeter (DSC), and thermo gravimetric analysis (TGA). Sorption experiments were conducted to observe the interaction of sulfonated polymers with water and methanol. The S-PEK membranes exhibited proton conductivities from 1.31  10-3 to 3.52  10-3 S/cm, water swell from 12.70 to 35.50 %, IEC from 0.45 to 0.75 meq/g and methanol diffusion coefficients from 3.65  10-7 to 5.10  10-7 cm2/S at 25 °C.

Abstract: Recent search for novel thermoelectric materials has revealed a new class of compounds with half-Heusler structure as good candidates for higher performance thermoelectric conversion [1-2], since the structure was first found [3]. The unit cell of the half-Heusler with a space group F4¯ 3m consists of 4 interpenetrating cubic lattices. The crystallographic sites (0,0,0) and (1/4, 1/4, 1/4) are occupied by two different transition metals, the (1/2, 1/2, 1/2) site is occupied by Sn, Sb, or Bi, and the site (3/4, 3/4, 3/4) is empty [4,5]. Candidates with this structure for the investigation would be categorized into the combination of (Ti/Zr/Hf)(Co/Ni/Pt)(Sb/Sn/Bi) [4-6].

Abstract: In-filled CoSb3 skutterudites (InzCo4Sb12) were prepared and the filling effects on the thermoelectric and transport properties were examined. Seebeck coefficient and Hall coefficient confirmed that all the samples showed n-type conductivity. Temperature dependence of the electrical resistivity suggested that InzCo4Sb12 is a highly degenerate semiconducting material. The thermal conductivity was considerably reduced by In filling and the lattice contribution was dominant.

Abstract: Te-doped CoSb3 was prepared by the encapsulated induction melting, and its doping effects on the thermoelectric properties were investigated. Single phase d-CoSb3 was successfully obtained by the subsequent annealing at 773K for 24 hours. Tellurium atoms acted as electron donors by substituting antimony atoms. Thermoelectric properties were remarkably improved by the appropriate doping. Dimensionless figure of merit was obtained to be 0.83 at 700K for the CoSb2.8Te0.2 specimen.

Abstract: The encapsulated induction melting was attempted to prepare the Sn-filled CoSb3 skutterudites and their electronic transport properties were investigated. Single phase δ-CoSb3 was successfully obtained by the subsequent isothermal heat treatment at 823K for 6 days in vacuum. The Sn-filled CoSb3 showed p-type conductivity at 300K to 700K at it is a highly degenerate semiconductor. Lattice contribution was dominant to thermal conductivity and it was considerably reduced by Sn filling in the CoSb3 skutterudite.

Abstract: Co1-xFexSb3 skutterudites were synthesized by encapsulated induction melting and their thermoelectric properties were investigated. Single phase δ-CoSb3 was successfully obtained by the subsequent heat treatment at 773K for 24 hours in vacuum. However, δ-CoSb3 was decomposed to FeSb2 and Sb when x≥0.3, which means that the solubility limit of Fe to Co is x<0.3. The positive signs of Seebeck coefficients for all Fe-doped specimens revealed that Fe atoms acted as p-type dopants by substituting Co atoms. Thermoelectric properties were remarkably enhanced by Fe doping and optimum composition was found to be Co0.7Fe0.3Sb3 in this study.

Abstract: 0.03Pb(Sb0.5Nb0.5)O3-0.03Pb(Mn1/3Nb2/3)O3-(0.94-x)PbTiO3-xPbZrO3 ceramics doped with CeO2 were synthesized by conventional bulk ceramic processing technique. Phases analysis, microstructures and piezoelectric properties were investigated as a function of CeO2 contents (0.03, 0.05, 0.1 0.3, 0.5 and 0.7wt%). Microstructures and phases information were characterized using a scanning electron microscope (SEM) and an X-ray diffractometer (XRD). Relative dielectric constant (K33 T) and coupling factor (kp) were obtained from the resonance measurement method. Both K33 T and kp were shown to reach to the maximum at 0.1wt% CeO2. In order to evaluate the stability of resonance frequency and effective electromechanical coupling factor (Keff) as a function of CeO2 addition under strong electric field, the variation of resonance and anti-resonance frequency were also measured using a high voltage frequency response analyzer(FRA5096) under various alternating electric fields from 10V/mm to 80V/mm. It was shown that effective electromechanical coupling factor was increased by increasing the CeO2 additions.

Abstract: Processing and properties of a dome-shaped piezoelectric transformer with a composition of 0.03Pb(Sb0.5Nb0.5)O3-0.03Pb(Mn1/3Nb2/3)O3-0.465PbTiO3-0.475PbZrO3 have been investigated. A dome-shaped sample was fabricated by powder injection molding. The dimension of the dome-shaped sample was a 28 mm in diameter and 2.1mm in thickness with a curvature radius of 18 mm. Finite element modeling for the complicated piezoelectric transformer was applied to simulate vibration mode in the sample. The high power characteristics of a dome-shaped piezoelectric transformer were examined by the lighting test for a 55W PL lamp. The 55W PL lamp was successfully driven by the dome-shaped piezoelectric transformer with sustaining efficiency higher than 98%. The transformer with ring/dot area ratio of 2.1 exhibited the maximum properties in terms of output power, efficiency and temperature stability.

Abstract: This paper describes a micromachined piezoelectric bimorph microphone, which is built on a low stress Parylene diaphragm with high quality ZnO films. The ZnO thin film has fine grain with the average grain size less than 1
and the grain orientation is perpendicular to the substrate. The highest sensitivity of piezoelectric bimorph microphone fabricated in this study is about 0.74 mV/Pa, which is twice higher than that of an individual segmented electrode. Based upon the experimental results, we proposed the equivalent electrical circuit model of piezoelectric bimorph microphone.

Abstract: Encapsulated induction melting was attempted to prepare binary skutterudite CoSb3 and its thermoelectric properties were investigated. Single phase δ-CoSb3 was successfully obtained by the subsequent isothermal heat treatment at 773K-873K for 24 hours in vacuum. Thermoelectric properties were changed with constituent phases because β-CoSb and Sb are metallic/semimetallic phases, while γ-CoSb2 and δ-CoSb3 are semiconducting phases. Thermoelectric properties were remarkably improved by the proper heat treatment and they were closely related to phase transitions.