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Articles by author: Stephan G. Müller

• Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices
  Published in: Silicon Carbide and Related Materials 2003 (p1113)
• Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices
  Published in: Silicon Carbide and Related Materials 2003 (p35)
• Equilibrium Growth Morphologies of SiC Polytypes
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p425)
• Experimental and Theoretical Analysis of the High Temperature Thermal Conductivity of Monocrystalline SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p623)
• Experimental and Theoretical Analysis of the Thermal Conductivity of SiC Powder as Source Material for SiC Bulk Growth
  Published in: Silicon Carbide and Related Materials - 1999 (p43)
• Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions
  Published in: Silicon Carbide and Related Materials - 1999 (p39)
• High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production
  Published in: Silicon Carbide and Related Materials 2001 (p23)
• Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor
  Published in: Silicon Carbide and Related Materials 2004 (p137)
• Large Diameter 4H-SiC Substrates for Commercial Power Applications
  Published in: Silicon Carbide and Related Materials 2003 (p41)
• Large Diameter, Low Defect Silicon Carbide Boule Growth
  Published in: Silicon Carbide and Related Materials 2000 (p3)
• Mass Transfer in Optical Nanocomposites Induced by Pulsed Laser Irradiation
  Published in: Interfacial Effects and Novel Properties of Nanomaterials (p105)
• Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer, Mass Transport and Heat of Crystallization and Results on its Experimental Verification
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p57)
• Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p33)
• Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances
  Published in: Silicon Carbide and Related Materials 2003 (p3)
• Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications
  Published in: Silicon Carbide and Related Materials - 1999 (p3)