Papers by Author: Steven Danyluk

Abstract: This paper discusses the application of an ionizing source coupled with galvanic differences between metals in a measure of the work function difference between the metal surfaces. The electrical field generated from the contact potential difference (CPD) between two electrodes will cause the gaseous ions to discharge at both surfaces, creating a measurable current. The current depends on the surface size, spacing, and ionizing source power. One of the surfaces (probe) can vary in shape and size, and if inert, can be used to obtain the work function or surface potential of the second surface. The ionic current is proportional to ion mobility, ion generation rate, CPD, and the probe size, but inversely proportional to the spacing between the probe and the sample. It is found, as expected, that there is an approximate linear relationship between the ionization probe signal and the work function of the surfaces of metals.

Abstract: Recently, material removal utilising electrokinetic phenomenon was proposed as an alternative to create material removal at the nanometric level [1]. The concept of the introduced material removal process is to impinge particles contained in the slurry, under the influence of hydrodynamic and electrokinetic effects, onto the workpiece with a predetermined velocity to create material removal on the surface. The material removal process proved to be feasible where the material removal rate was reported to be in the range of a few hundred nm/hr with a surface roughness of a few nm (RMS). This paper aims to look into the effect of the electrochemical dissolution on the material removal process since high voltages are involved during the material removal process. During the experimental study, electrochemical dissolution was observed and it contributed a certain proportion of the material removal process. However, the main material removal mechanism still relies on the mechanical action of the abrasive particles on the surface of the workpiece to create material removal during the process.

Abstract: With the demand for precise nanometric material removal with minimal defects, several non-contact ultraprecision machining techniques were developed over recent decades. The electrokinetic material removal technique [1] is one such method that allows material to be removed without any physical contact between the tool and the workpiece. In this work, the influence of the slurry mixture on the material removal rate for the electrokinetic material removal process is studied. During the process, it was observed experimentally that the mixture of the slurry affected the material removal rate. The parameters varied in the slurry mixture experiments were the size and concentration of the particles. Explanations for the behaviour of the material removal rate were also suggested during the study to further understand the electrokinetic material removal technique.

Abstract: Non-contact material removal processes offer numerous advantages over traditional machining approaches and nowhere is this more apparent than in the fabrication of micro devices. Current micromachining techniques such as microgrinding and micromilling have limitations with respect to their positioning accuracy and tool deflections. Electro thermal processes such as microEDM and laser machining usually result in a heat affected zone being produced. Other approaches such as etching and non-contact ultraprecision polishing are either costly or are not suitable for high throughput. In order to address these limitations, alternative micromachining techniques are required. In this paper, a non-contact material removal technique based on the electrokinetic phenomenon is proposed for precise material removal at rates in the order of nanometers/min. The aim of this research is to have a better understanding on the electrokinetic material removal technique by studying the trajectory of the particles and the influence of the frequency of the electric field on the material removal rate.

Abstract: This paper describes a mechanical mechanism of chemical mechanical polishing (CMP) and the model is applied to the polishing of silicon substrates by polyurethane pads and slurries containing fumed silica as is typically done in the manufacture of integrated circuits. The model utilizes the concept that the polishing pad surface contains asperities that support the normal load on the wafer, and that friction and hydrodynamic forces influence wear. The interfacial fluid pressure can significantly influence the normal pressures on the wafers and its effects modify the wear rate predictions.