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Articles by author: T. Paul Chow

• 1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs
  Published in: Silicon Carbide and Related Materials 2004 (p901)
• 1kV 4H-SiC JBS Rectifiers Fabricated Using an AlN Capped Anneal
  Published in: Silicon Carbide and Related Materials - 2002 (p843)
• 930, 170Ω.cm² Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing
  Published in: Silicon Carbide and Related Materials 2003 (p1413)
• Achieving Low Sheet Resistance from Implanted P-Type Layers in 4H-SiC Using High Temperature Graphite Capped Annealing
  Published in: Silicon Carbide and Related Materials 2006 (p567)
• Al/C/B Co-Implanted High-Voltage 4H-SiC PiN Junction Rectifiers
  Published in: Silicon Carbide and Related Materials - 1999 (p1367)
• Asymmetric Interface Densities on n and p Type GaN MOS Capacitors
  Published in: Silicon Carbide and Related Materials 2005 (p1525)
• Beryllium-Implanted 6H-SiC P⁺N Junctions
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1049)
• Breakdown Voltage Improvement of 4H-SiC Schottky Diodes by a Thin Surface Implant
  Published in: Silicon Carbide and Related Materials - 1999 (p1211)
• BV_CEO Versus BV_CBO for 4H and 6H Polytype SiC Bipolar Junction Transistors
  Published in: Silicon Carbide and Related Materials 2004 (p893)
• Carrier Lifetime Extraction from a 6H-SiC High Voltage p-i-n Rectifier Reverse Recovery Waveform
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1065)
• Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped Annealing
  Published in: Silicon Carbide and Related Materials 2005 (p1367)
• Characteristics of Epitaxial and Implanted N-Base 4H-SiC GTO Thyristors
  Published in: Silicon Carbide and Related Materials 2000 (p739)
• Characteristics of Trench-Refilled 4H-SiC P-N Junction Diodes Fabricated by Selective Epitaxial Growth
  Published in: Silicon Carbide and Related Materials 2004 (p159)
• Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay
  Published in: Silicon Carbide and Related Materials 2004 (p405)
• Chemical Vapor Deposition of n-Type SiC Epitaxial Layers Using Phosphine and Nitrogen as the Precursors
  Published in: Silicon Carbide and Related Materials - 2002 (p145)