Papers by Author: Tai Chao Su

Abstract: Ti₃SiC₂, a ternary carbide, was proposed at this paper to use as the binder of polycrystalline diamonds to overcome the weaknesses of traditional metal binders and ceramic binders. Ti₃SiC₂ was first reported to be in-situ synthesized under high pressure (4GPa) and at high temperature (1400°C) (HPHT) from the mixtures of Ti, Si and graphite powders or the mixture of Ti, SiC and graphite powders. Ti₃SiC₂-damond composites were also made at HPHT from the previous mixtures and diamond particles. TiC_x, Ti₅Si₃C_x and TiSi₂ were main impurities and/or intermediate products of Ti₃SiC₂ samples synthesized at HPHT. Ti₃SiC₂ content increased as synthesized time increased from 10 min to 60 min. For as-synthesized composites, diamond particles were evenly distributed in matrix. The diamond particles are bonded well with the matrix by three types of interface.

Abstract: With adopting Al as the nitrogen getter in Ni70Mn25Co5 or Fe55Ni29Co16 catalyst, High-quality type-Ⅱa large diamonds have been grown under the conditions of about 5.5GPa and 1580K by using the temperature gradient method. While Al(2.0wt%) is added in the Fe55Ni29Co16, the nitrogen concentration(Nc) in the diamond is less than 1ppm. While Al(4.0wt%) is added in the Ni70Mn25Co5, the Nc in the diamond is highly arrived at 48ppm. The different of solubility of nitrogen in both catalyst at high pressure and high temperature is the basic reason of the different effect of eliminating nitrogen of Al. It can be shown in experamentals that Al is a less efficient nitrogen getter in Ni70Mn25Co5 than in Fe55Ni29Co16. While Al(2.0wt%) is added in the Fe55Ni29Co16, the high-quality type-Ⅱa large diamond, in which nitrogen is less than 1ppm and which the size was arrived at 3.3mm, had grown by decreasing the growth rate of diamond.